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Passivation of a Bulk Defect E_{c}-0.22 eV in GaAs by Contact with Phosphoric Acid

100%
Babiński A., Gołdys E.
Acta Physica Polonica A
|
1991
|
vol. 79
|
issue 2-3
277-280
EN
The E_{c}-0.22 eV trap in Horizontal Bridgman undoped n-type GaAs may be passivated by contact with phosphoric acid for 8 hours at room temperature. Isochronal annealing, at around 250°C for 1 hour resulted in the partial recovery of this defect. The possible mechanisms of E_{c}-0.22 eV trap passivation are proposed.
2
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The Luminescence and EPR Characterisation of Neutron Transmutation Doped Gallium Phosphide

81%
Gołdys E., Godlewski M., Sienkiewicz A.
Acta Physica Polonica A
|
1991
|
vol. 79
|
issue 2-3
259-262
EN
The photoluminescence and EPR measurements of neutron irradiated and annealed GaP samples are presented. Both methods confirm the presence of neutral Ge_{Ga}. The EPR spectrum gives also an indication of interstitial Ge.
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