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1

Fabrication and Properties of Amorphous Zinc Oxynitride Thin Films

100%

Kaczmarski J., Borysiewicz M., Pągowska K., Kamińska E.

Acta Physica Polonica A

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2016

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vol. 129

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issue 1

150-152

EN

Zn-O-N thin films fabricated by reactive radio frequency magnetron sputtering have been investigated for their compositional, structural, transport and optical properties. In contrast to processes in which the reaction for either the oxide or the nitride is dominant, the multireaction process yields a substantially amorphous films with the Hall mobility within the range from 15 to 80 cm²/(V s). In addition, it has been observed that the Hall mobility increases for Zn-O-N. Since it has a narrower bandgap than ZnO, it is put forward that the high mobility is due to the valence band maximum in this material lying above the trap states in the gap commonly observable in ZnO. These traps originate from oxygen vacancies and are localized at the bottom of the band gap influencing the carrier mobility.

2

Tuning Transparent Supercapacitor Performance by Controlling the Morphology of its ZnO Electrodes

88%

Borysiewicz M., Wzorek M., Ekielski M., Kaczmarski J., Wojciechowski T.

Acta Physica Polonica A

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2017

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vol. 131

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issue 6

1550-1553

EN

Transparent supercapacitors were fabricated using nanostructures ZnO electrodes deposited using reactive magnetron sputtering. By fine tuning the deposition process parameters the electrodes with different morphologies were obtained, from hierarchical through sponge-like to nanocolumnar. The device performance related to the electrode morphology was assessed. It was found that the nanocolumnar electrodes provided best performance both in terms of effective device capacitance (18.3 μF/cm²) and transparency ( ≈ 100% in the visible range). The worst performance, with 80% lower effective capacitance, was obtained in the devices with the sponge-like morphology.

3

Fabrication and Properties of Amorphous In-Ga-Zn-O Material and Transistors

76%

Kaczmarski J., Taube A., Dynowska E., Dyczewski J., Ekielski M., Kamińska E., Piotrowska A.

Acta Physica Polonica A

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2013

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vol. 124

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issue 5

855-857

EN

In-Ga-Zn-O thin films were fabricated by means of reactive RF magnetron sputtering. Mechanism of free electrons generation via oxygen vacancies formation is proposed to determine the relationship between oxygen content in the deposition atmosphere and the transport properties of IGZO thin films. The depletion-mode a-IGZO thin film transistor with field-effect mobility of 12 cm^2/(Vs) has been demonstrated.

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3 Acta Physica Polonica A

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1 Dynowska E.

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1 Taube A.

1 Wojciechowski T.

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Fabrication and Properties of Amorphous Zinc Oxynitride Thin Films

Tuning Transparent Supercapacitor Performance by Controlling the Morphology of its ZnO Electrodes

Fabrication and Properties of Amorphous In-Ga-Zn-O Material and Transistors