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1
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Electrical Properties of Anisotype ZnO/ZnSe Heterojunctions

100%
Makhniy V., Khusnutdinov S., Gorley V.
Acta Physica Polonica A
|
2009
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vol. 116
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issue 5
859-861
EN
The p-ZnO/n-ZnSe heterojunction was prepared by the photothermal oxidation of ZnSe substrate. Current- voltage characteristics are measured and discussed. The potential barrier height is equal to 3 eV at 300 K and its anomalous temperature coefficient reported here is due to the high defects concentration ( ≈ 10^{14} cm^{-2}) on the interface. It is established that forward current in p-n junction is limited by the recombination processes in the space charge region, carriers tunneling and above the barrier emission. The reverse current is determined by tunneling processes at low bias and avalanche effect at high bias.
2
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Electrical Properties of p-ZnTe/n-CdTe Photodiodes

100%
Chusnutdinow S., Makhniy V., Wojtowicz T., Karczewski G.
Acta Physica Polonica A
|
2012
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vol. 122
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issue 6
1077-1079
EN
Current-voltage (I-V) and capacitance-voltage (C-V) characteristics of photovoltaic, thinfilm p-ZnTe/n-CdTe heterojunctions have been studied in the temperature range of 280-400 K. The p-n junctions were grown by MBE on (100) semi-insulating GaAs substrates. From the analysis of I-V and C-V curves the potential barrier height of the junctions and its temperature dependence are determined. The relatively large value of the temperature coefficient of the potential barrier height (2.5-3.0 × 10^{-3} eV/K) indicates a high density of defects at the p-ZnTe/n-CdTe interface. The presence of interface defects limits the efficiency of the solar energy conversion of these devices.
3
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The Effect of Surface Preparation on Physical Properties of Ni-ZnSe Junctions

88%
Chusnutdinow S., Makhniy V., Aleszkiewicz M., Zaleszczyk W., Slotov M.
Acta Physica Polonica A
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2014
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vol. 126
|
issue 5
1076-1078
EN
We report on optical and photovoltaic properties of Ni-ZnSe junctions. We demonstrate that the preparation method of the ZnSe surface determines luminescence, optical transmission of ZnSe substrates and photovoltaic spectra of the Ni-ZnSe junctions. The observed effects are explained by formation of low-dimensional quantum structures on the ZnSe surface in result of the surface preparation procedure. This is confirmed by atomic force microscopy studies, which show the presence of grains with lateral dimensions of 30-300 nm on ZnSe surface. The smallest grains are responsible for a wide spectral band observed in photoluminescence at 3.4 eV, i.e., at much higher energies than the energy gap of bulk ZnSe, E_{g} ≈ 2.7 eV.
4
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Anharmonic Optical Phonon Effects in ZnO Nanocrystals

76%
Khusnutdinov S., Dynowska E., Zaleszczyk W., Makhniy V., Wysmołek A., Korona K.
Acta Physica Polonica A
|
2011
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vol. 119
|
issue 5
678-680
EN
Zinc oxide (ZnO) is a very promising material for optoelectrical devices operating at the short-wavelength end of the visible spectral range and at the near UV. The Raman scattering studies of ZnO heterolayers formed by isothermal annealing show sharp phonon lines. In addition to the A_1(TO), E_1(TO), E_2^{H}, and E_1(LO) one-phonon lines, we observed two-phonon lines identified as: E_2^{H} - E_2^{L}, E_2^{H} + E_2^{L}, and 2LO at 332, 541, and 1160 cm^{-1}, respectively (at room temperature). The identification of the E_2^{H} - E_2^{L} peak was confirmed by its thermal dependence. Temperature dependent measurements in the range 6-300 K show that the phonon frequencies decrease with temperature. The E_2^{H} peak is at energy 54.44 meV (439.1 cm^{-1}), at 4 K and due to phonon-phonon anharmonic interaction, its energy decreases to 54.33 meV (438.2 cm^{-1}) at room temperature. The Grüneisen parameter found for this oscillation mode was γ_{E} 2H = 1.1 at about 300 K. The intensity of the E_2^{H} - E_2^{L} peak increases strongly with temperature and this dependence can be described by the Bose-Einstein statistics with activation energy of 13.8 meV (nearly equal to the energy of the E_2^{L} phonon).
5
Content available remote

Reduction of the Optical Losses in CdTe/ZnTe Thin-Film Solar Cells

64%
Chusnutdinow S., Pietruszka R., Zaleszczyk W., Makhniy V., Wiater M., Kolkovsky V., Wojtowicz T., Karczewski G.
Acta Physica Polonica A
|
2014
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vol. 126
|
issue 5
1072-1075
EN
We report on reduction of optical losses in n-CdTe/p-ZnTe thin-film solar cells grown by molecular beam epitaxy. The investigated thin-film devices were grown from elemental sources on monocrystalline, semi-insulating, (100)-oriented GaAs substrates. The optical losses have been reduced by a texturing of the device surface and by depositing of a ZnO antireflection coating. Current-voltage and spectral characteristics of the investigated p-ZnTe/n-CdTe solar cells depend significantly on the preparation of the surface of the ZnTe window. We describe a procedure of chemical etching of the ZnTe window leading to surface texturing. A ZnO layer of proper thickness deposited by low-temperature atomic layer deposition technique on the ZnTe surface forms an effective antireflection coating that leads to the reduction of optical losses. Due to reduction of the optical losses we observe increase of the short-circuit current, J_{SC}, by almost 60% and of the energy conversion efficiency by 44%.
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