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Electrical Properties of SbSI/Sb_2S_3 Single and Double Heterostructures

100%
Toroń B., Nowak M., Grabowski A., Kępińska M.
Acta Physica Polonica A
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2013
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vol. 124
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issue 5
830-832
EN
The SbSI/Sb_2S_3 single heterostructures as well as Sb_2S_3/SbSI/Sb_2S_3 and SbSI/Sb_2S_3/SbSI double heterostructures have been produced by applying CO_2 laser treatment of p-type SbSI single crystals. The current-voltage and transient characteristics of these heterostructures have been measured in temperatures below and above the SbSI single crystal Curie temperature (T_{c} = 293 K). The results have been fitted with appropriate theoretical formulae to determine the following types of the investigated heterojunctions: P-p SbSI/Sb_2S_3, p-P-p Sb_2S_3/SbSI/Sb_2S_3 and P-p-P SbSI/Sb_2S_3/SbSI. Influence of the illumination on electrical properties of SbSI/Sb_2S_3 single and double heterostructures has been reported. Fabricated new structures may be potentially applicable in electronics and optoelectronics as a new type of metal-ferroelectric-semiconductor devices.
2
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Mobility of Ferroelectric Domains in Antimony Sulfoiodide

100%
Toroń B., Nowak M., Kępińska M., Szperlich P.
Acta Physica Polonica A
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2014
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vol. 126
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issue 5
1093-1095
EN
Different optical energy gaps in ferroelectric and paraelectric phases as well as light scattering on domain walls allow to observe ferroelectric domains in antimony sulfoiodide (SbSI) near the Curie temperature. Mobility 8.11(44)× 10^{-8} m^2/(Vs) of ferroelectric domain walls under external electric field has been determined along c-axis of SbSI single crystals using optical transmittance microscopy.
3
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Properties of Sonochemically Prepared CuIn_{x}Ga_{1-x}S_{2} and CuIn_{x}Ga_{1-x}Se_{2}

64%
Jesionek M., Nowak M., Szperlich P., Kępińska M., Mistewicz K., Toroń B., Stróż D., Szala J., Rzychoń T.
Acta Physica Polonica A
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2014
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vol. 126
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issue 5
1107-1109
EN
Nanoparticles of chalcopyrites copper indium gallium sulfide (CuIn_{x}Ga_{1-x}S_{2} or CIGS) and copper indium gallium selenide (CuIn_{x}Ga_{1-x}Se_{2} or CIGSe) were fabricated sonochemically. They were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy, high resolution transmission electron microscopy, selected area electron diffraction, and diffuse reflectance spectroscopy. The electrical and photoelectrical properties of the fabricated nanomaterials were investigated.
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