Search results

Sort By:

Limit search:

Infrared Luminescence in Er and Er+O Implanted 6H SiC

100%

Kozanecki A., Jantsch W., Heis W., Prechtl G., Sealy B., Jeynes C.

Acta Physica Polonica A

1997

vol. 92

issue 5

879-882

Photoluminescence in the neighbourhood of 1.54 μm due to the ^{4}I_{13/2}-^{4}I_{15/2} intra-4f-shell transitions of Er^{3+} ions in 6H SiC is studied. Effects of oxygen coimplantation is also investigated. No difference in the photoluminescence spectra of Er only and Er+O implanted SiC was found. It is concluded that the emission around 1.54 μm in SiC:Er originates from erbium-oxygen complexes, which are formed as a result of thermal annealing.

Refine search results

1 Acta Physica Polonica A

1 1997

1 Heis W.

1 Jantsch W.

1 Jeynes C.

1 Kozanecki A.

1 Prechtl G.

1 Sealy B.

Search results

Infrared Luminescence in Er and Er+O Implanted 6H SiC