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Homoepitaxial Growth of YBa_{2}Cu_{3}O_{7} on Single Crystal YBa_{2}Cu_{3}O_{x} Substrates

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Morishita T., Zama H., Shiohara Y.

Acta Physica Polonica A

1997

vol. 92

issue 1

97-103

a- and c-axis oriented YBa_{2}Cu_{3}O_{x} (YBCO) films were epitaxially grown on (100) and (001) YBCO single-crystal substrates, respectively, by metalorganic chemical vapor deposition under the same preparation conditions including substrate temperature. As a Ba precursor Ba(DPM)_{2}-2tetraen was adopted. This precursor increased a deposition rate for YBCO films to 50 nm/h at 140°C. The substrates were formed from a 14.5x14.5x13 mm YBCO single crystal grown by a modified top-seeded crystal pulling method. Only a few surface atomic layers remained damaged after polishing and cleaning, which however did not affect the epitaxy of film growth. The crystallinity of the interface between an epilayer and substrate was much improved compared to that on usual perovskite substrates.

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1 Acta Physica Polonica A

1 1997

1 Morishita T.

1 Shiohara Y.

1 Zama H.

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Homoepitaxial Growth of YBa_{2}Cu_{3}O_{7} on Single Crystal YBa_{2}Cu_{3}O_{x} Substrates