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Impurity-Scattering Limited Electron Mobility in Free Standing Quantum Wires: Image Charge Effect

100%
Vagner P., Mos̆ko M.
Acta Physica Polonica A
|
1996
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vol. 90
|
issue 5
1103-1107
EN
We calculate the impurity-scattering limited mobility of the one-dimensional electron gas in a rectangular GaAs quantum wire confined in the vertical (growth) direction by n-modulation doped AlGaAs layers and free standing along the transverse direction. The scattering potential of the ionized impurity is obtained by solving the Poisson equation with z-dependent electrostatic permittivity in order to take into account the image charge effect due to the abrupt permittivity change at the GaAs/air interfaces. We show that the "image impurity" scattering tends to drastically reduce the electron mobility for sufficiently small (≈10 nm) transverse wire widths.
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Near-Band Edge Spectral Hole in Quantum Well: No Evidence for Subpicosecond Plasma Thermalization

100%
Mos̆ko M., Mos̆ková A.
Acta Physica Polonica A
|
1996
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vol. 90
|
issue 5
1055-1059
EN
We show that at low carrier energies and densities the carriers in a two-dimensional Coulomb gas interact via classical unscreened carrier-carrier collisions. This allows us to calculate exactly the thermalization due to the two-dimensional carrier-carrier collisions in a nonthermal low-density (≈10^{10} cm^{-2}) two-dimensional plasma excited near the band edge of an undoped GaAs quantum well. The thermalization is found to be 10-15 times slower than the 200 fs thermalization deduced from the previous spectral-hole burning measurements, which means that the spectral hole does not reflect the thermalization process. We also show that the Born approximation fails in describing such carrier-carrier collisions.
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