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Terahertz Emission from Narrow Gap Semiconductors Photoexcited by Femtosecond Laser Pulses

100%
Adomavičius R., Urbanowicz A., Molis G., Krotkus A.
Acta Physica Polonica A
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2005
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vol. 107
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issue 1
132-136
EN
Large increase in the emitted terahertz power was observed for p-InAs samples with the p-doping levels of approximately 10^{16}-10^{17} cm^{-3}. This increase was explained by a large surface depletion layer and an electric-field-induced optical rectification effect in the layer. Terahertz fields radiated by the samples of all three investigated Cd_xHg_{1-x}Te layers was of the same order of magnitude. No azimuthal angle dependence of the radiated signal was detected, which evidences that linear current surge effect is dominating over nonlinear optical rectification. Azimuthal angle and magnetic fields emission witness that it is caused by linear photo-Dember type processes.
2
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Optical Pump - Terahertz Probe Measurement of the Electron Dynamics in Ga_{1-x}Mn_xAs

88%
Šustavičiūtė R., Balakauskas S., Adomavičius R., Krotkus A., Sadowski J.
Acta Physica Polonica A
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2007
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vol. 112
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issue 2
311-314
EN
An optical pump - terahertz probe technique was used for measuring electron lifetime in various Ga_{1-x}Mn_xAs epitaxial layers with the subpicosecond temporal resolution. The measurements were performed on the samples with x up to 2%, which had large resistivities and were transparent in a THz frequency range. It has been found that an induced THz absorption relaxation is the fastest and electron lifetimes are the shortest for the samples with the smallest Mn content. For the samples with x=0.3% and x=2% this relaxation becomes much slower; its rate is comparable to the carrier recombination rate in Ga_{1-x}Mn_xAs substrate.
3
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Terahertz Emission from the Surfaces of InAs and Other Narrow-Gap Semiconductors

88%
Adomavičius R., Krotkus A., Molis G., Urbanowicz A., Malevich V.
Acta Physica Polonica A
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2008
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vol. 113
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issue 3
859-862
EN
THz pulses were used to investigate carrier dynamics in narrow-gap semiconductors. The measurement of the optically induced THz pulse absorption transients provided important insights into electron energy relaxation in the conduction band. In the second set of experiments, THz generation from the surfaces of various semiconductors was studied and compared. It was found that the most efficient THz emitters are semiconductors with a narrow band gap, large intervalley separation in the conduction band, and low nonparabolicity of the main valley.
4
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Low-Temperature MBE Grown GaAs for Pulsed THz Radiation Applications

76%
Adomavičius R., Balakauskas S., Bertulis K., Geižutis A., Molis G., Krotkus A.
Acta Physica Polonica A
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2005
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vol. 107
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issue 1
128-131
EN
Attempts to optimize recombination characteristics of low-temperature MBE grown GaAs layers for their use in terahertz radiation devices are described and the characteristics of this material are compared with its alternative - As-ion implanted GaAs crystals.
5
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Terahertz Spectroscopy of Ordered PbSc_{1/2}Nb_{1/2}O_3 Ceramics

64%
Macutkevič J., Adomavičius R., Krotkus A., Valušis G., Grigalaitis R., Banys J., Bormanis K., Sternberg A.
Acta Physica Polonica A
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2008
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vol. 113
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issue 3
883-886
EN
The ordered PbSc_{1/2}Nb_{1/2}O_3 ceramics were studied by THz transmission spectroscopy in the temperature range of 80-300 K. Below ferroelectric phase transition temperature the strength of central mode gradually decreases and gives evidence for a mixed displacive and order-disorder character of the transitions. Ferroelectric phase transition is connected with an abrupt freezing and rise of polar nanoregions into ferroelectric domains.
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