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Low-Temperature MBE Grown GaAs for Pulsed THz Radiation Applications

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Adomavičius R., Balakauskas S., Bertulis K., Geižutis A., Molis G., Krotkus A.
Acta Physica Polonica A
|
2005
|
vol. 107
|
issue 1
128-131
EN
Attempts to optimize recombination characteristics of low-temperature MBE grown GaAs layers for their use in terahertz radiation devices are described and the characteristics of this material are compared with its alternative - As-ion implanted GaAs crystals.
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