Millimeter wave bridge technique for non-destructive material homogeneity characterization is described. The idea of this technique is the local excitation of the millimeter waves in the testing material and the measurement of the transmitted (reflected) wave amplitude and phase in different places of it, i.e. the material plate is scanned by the beam of the millimeter waves. The results of the homogeneity measurements for dielectric wafers according to dielectric constant anisotropy are presented. The measurement technique sensitivity is discussed.
It was found that the response of grained La_{0.67}Ca_{0.33}MnO_3 films to microwave radiation is of thermal nature. A nonresonant method for measuring of the electric resistance of grains was developed. It allows one to avoid the influence of the magnetic field of the wave on the measurement results. The measurements of the temperature dependences of the grain electric resistance indicate that in the vicinity of the maximum-resistance temperature T_m, the intrinsic electric resistance of the grains is more than by two orders of magnitude lower than the film resistance measured by applying the dc current. The obtained experimental results agree well with those given by resonant techniques.
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