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Damage Production in As Implanted GaAs_{1-x}P_{x}

100%
Krynicki J., Warchoł S., Rzewuski H., Groetzschel R.
Acta Physica Polonica A
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1995
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vol. 87
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issue 1
249-252
EN
Post-implantation damage in GaAs_{1-x}P_{x} compounds (x = 0, 0.15, 0.39, 0.65, and 1) implanted with 150 keV As ions in the dose range 1 × 10^{13} -8 × 10^{13} cm^{-2} at 120 K was investigated. The depth distribution of damage and the degree of amorphization were measured by Rutherford backscatter­ing 1.7 MeV He^{+} channeling technique. The critical damage dose and the critical energy density necessary for amorphization were determined. It is shown that GaAsP is easier to amorphize (lower critical damage dose) than the binary crystals (GaAs, GaP) at low temperatures.
2
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Heterogeneous Amorphization of Cd Implanted GaAs at Room Temperature

100%
Krynicki J., Rzewuski H., Groetzschel R., Claverie A.
Acta Physica Polonica A
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1991
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vol. 79
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issue 2-3
349-353
EN
Amorphization of GaAs implanted with Cd in the dose range of 2 x 10^{13}-1.2 x 10^{14} ions/cm2 and the energy range of 20 to 180 keV at room temperature has been investigated. The degree and the depth distributions of postimplanted damage were measured by using RBS technique. The critical dose for each Cd-ion energy was determined. The amorphization models have been discussed. The results obtained are in agreement with theoretical predictions supporting heterogeneous amorphization of Cd-implanted GaAs at room temperature.
3
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Heterogeneous Amorphization of P and As Implanted GaAs at Low Temperatures

100%
Krynicki J., Rzewuski H., Turos A.
Acta Physica Polonica A
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1992
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vol. 82
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issue 5
871-875
EN
Amorphization of P and As implanted GaAs at liquid nitrogen temperature has been investigated. The post-implantation damage was measured by means of Rutherford Backscattering (RBS) He^{+} channeling technique. The critical dose and critical energy densities for amorphization were determined. From the results obtained it is concluded that for both ions the amorphization process can be satisfactorily described by the heterogeneous model.
4
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Changes in Luminescence of Ce:yag Crystals Under Ionizing Radiation Treatment

76%
Kaczmarek S., Moroz Z., Kwasny M., Kisielewski J., Lukasiewicz T., Wojtkowska J., Rzewuski H.
Acta Physica Polonica A
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1999
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vol. 95
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issue 6
953-964
EN
Radiation induced changes in the luminescence spectrum under influence of UV light, γ-rays, electrons and protons for several concentrations of Ce^{3+} ions as well as Mg^{2+} ions in yttrium-aluminum garnet crystals were investigated. To irradiate with γ and electron as grown crystals were used while for proton irradiations the crystals were thermally annealed. For small concentrations of cerium ions (≈0.01 at.%) an increase in the luminescence (about 100%) was observed after gamma irradiation with a dose of 10^{5} Gy. This increase was due to the growth in Ce^{3+} ions concentration after γ-irradiation (≈50%), due to the Ce^{4+} → Ce^{3+} recharging reaction. For highly doped Ce:YAG crystals (0.1 at%, 0.2 at.%) also an increase, but much smaller (4%), for the Mg codoped crystals (0.1 at.%) was observed. After 1 MeV electron irradiation in the over-threshold type interaction a decrease in luminescence is observed due to the domination of the Ce^{3+} → Ce^{4+} ionization process. In the case of the proton irradiation, for small fluencies (≈10^{13} particles/cm^{2}) an increase in luminescence is observed due to the domination of the recharging processes of Ce^{4+} ions. For larger fluencies (>10^{14} particles/cm^{2}) a decrease takes place due to a high level of radiation defects.
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