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Optical Transitions between Confined and Unconfined States in p-Type Asymmetric GaAs/InGaAs/AlGaAs QW Structures

100%
Sitarek P., Ryczko K., Misiewicz J., Reuter D., Wieck A.
Acta Physica Polonica A
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2011
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vol. 120
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issue 5
849-851
EN
We present contactless surface photovoltage spectroscopy and photoreflectance studies of 10 nm wide, p-type doped asymmetric GaAs/InGaAs/AlGaAs quantum well structures. The MBE grown structures differ in spacer thickness between the quantum well and the reservoir of holes. The doping causes that quantum well is placed in electric field. The surface photovoltage spectroscopy measurements gave us detailed information about the optical transitions between confined states and between confined and unconfined states. The comparison of experimental and numerical analysis allows us to identify all features present in the surface photovoltage spectroscopy and photoreflectance spectra. It has been found that spacer layer thickness has significant influence on surface photovoltage spectroscopy spectra.
2
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From Localised to Ballistic Excitons in GaAs Quantum Wells

86%
Pulizzi F., Christianen P., Maan J., Eshlaghi S., Reuter D., Wieck A.
Acta Physica Polonica A
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2001
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vol. 100
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issue 3
397-402
EN
The lateral motion of excitons in GaAs quantum wells is studied by means of spatially resolved photoluminescence. We show that at low temperatures (4.2 K) the exciton motion evolves from localised excitons (zero mobility) in thin quantum wells to extremely high mobilities in wide wells. We find that for the widest quantum well investigated the observed motion cannot be explained by simple exciton diffusion and must be explained by the propagation of ballistic exciton polaritons.
3
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Shake-Up Processes in Photoluminescence of Two-Dimensional Holes in a High Magnetic Field

86%
Wójs A., Bryja L., Misiewicz J., Potemski M., Reuter D., Wieck A.
Acta Physica Polonica A
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2006
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vol. 110
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issue 3
429-435
EN
Recombination of excitons and positive trions is studied by two-beam photoluminescence of a two-dimensional hole gas in a high magnetic field. The singlet, dark-triplet and bright-triplet states of a free trion are resolved, and their binding energies are determined. Recombination of acceptor-bound trions is also detected, including a low-energy cyclotron replica, corresponding to a hole shake-up process. Identification of all these different transitions was possible by analysis of optical selection rules and the comparison of experimental spectra with realistic numerical calculations.
4
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Evidence of Singlet-Triplet Crossing in Photoluminescence of Positively Charged Excitons in GaAs Quantum Wells

73%
Bryja L., Wójs A., Jadczak J., Misiewicz J., Płochocka P., Potemski M., Reuter D., Wieck A.
Acta Physica Polonica A
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2008
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vol. 114
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issue 5
1073-1077
EN
Positively charged excitons in a two-dimensional hole gas in symmetric and asymmetric GaAs/Ga_{1-x}Al_{x}As quantum wells are studied in polarization-resolved photoluminescence experiments in high magnetic fields B (up to 23 T) and low temperatures (down to 300 mK). The experiments are accompanied by numerical calculations of a real structure. The whole family of trions (the singlet and a pair of triplets) are observed. The Coulomb energies crossing of singlet and triplet is found: hidden in symmetric and visible in asymmetric structures.
5
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Exciton Exchange between Nearly-Free and Acceptor-Bound States of a Positive Trion Assisted by Cyclotron Excitation

73%
Jadczak J., Bryja L., Wójs A., Bartsch G., Yakovlev D., Bayer M., Plochocka P., Potemski M., Reuter D., Wieck A.
Acta Physica Polonica A
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2011
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vol. 119
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issue 5
600-601
EN
In magneto-photoluminescence spectra of a two-dimensional hole gas in a GaAs quantum well we observe coupling of two different radiative states. The pair of coupled states are an acceptor-bound trion AX^{+} and an essentially free (only weakly localized by a shallow lateral potential) trion X^{+}, brought into resonance by an additional cyclotron excitation controlled by the magnetic field. The coupling mechanism is the exciton transfer, and the optical signature is a clear anticrossing of the emission lines of an X^{+} and a cyclotron replica of the AX^{+}.
6
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Electron Spins in Self-Assembled (In,Ga)As/GaAs Quantum Dots Studied by Pump-Probe Faraday Rotation

59%
Greilich A., Yugova I., Oulton R., Zhukov E., Yakovlev D., Bayer M., Shabaev A., Efros A., Stavarache V., Reuter D., Wieck A.
Acta Physica Polonica A
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2006
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vol. 110
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issue 3
287-293
EN
Static and dynamic properties of electron spins in self-assembled (In,Ga)As/GaAs quantum dots which contain on average a single electron per dot were studied by pump-probe Faraday rotation. Examples given here are the g-factor tensor components as well as the dephasing time T*_2 within a dot ensemble.
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