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Transport Properties of Silicon δ-Doped Gaas in High Electron Density Regime

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Buyanov A. V., Holtz P. O., Pozina G., Monemar B., Thordson J., Andersson T. G.

Acta Physica Polonica A

1997

vol. 92

issue 4

727-732

We report results for Si layers embedded in GaAs, extending from the delta-doped (δ-doped) range up to 6 monolayers derived by means of variable temperature resistivity and Hall effect measurements, secondary ion mass spectrometry and high resolution X-ray diffractometry techniques. The conductivity transition from free carrier transport in ordered δ-layers (<1 ML) to strongly-localized two-dimensional variable range hopping transport under potential fluctuation disordered conditions (>4 ML) is clearly observed. This observation is in good agreement with the secondary ion mass spectrometry and high resolution X-ray diffractometry data. Results from the intermediate case with 2-3 MLs are also discussed.

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1 Acta Physica Polonica A

1 1997

1 Andersson T. G.

1 Buyanov A. V.

1 Holtz P. O.

1 Monemar B.

1 Pozina G.

1 Thordson J.

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Transport Properties of Silicon δ-Doped Gaas in High Electron Density Regime