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Electrical Properties of Anisotype ZnO/ZnSe Heterojunctions

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Makhniy V., Khusnutdinov S., Gorley V.
Acta Physica Polonica A
|
2009
|
vol. 116
|
issue 5
859-861
EN
The p-ZnO/n-ZnSe heterojunction was prepared by the photothermal oxidation of ZnSe substrate. Current- voltage characteristics are measured and discussed. The potential barrier height is equal to 3 eV at 300 K and its anomalous temperature coefficient reported here is due to the high defects concentration ( ≈ 10^{14} cm^{-2}) on the interface. It is established that forward current in p-n junction is limited by the recombination processes in the space charge region, carriers tunneling and above the barrier emission. The reverse current is determined by tunneling processes at low bias and avalanche effect at high bias.
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