Search results

1

Distributions of electric parameters in MOS structures on 3C-SiC substrate

100%

Piskorski K., Przewlocki H., Esteve R., Bakowski M.

Open Physics

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2013

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vol. 11

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issue 2

231-238

EN

In this work studies of some electrical parameters of the MOS structure based on 3C-SiC substrate are presented. The effective contact potential difference ϕMS, the barrier height at the gate-dielectric interface E BG and the flat-band in semiconductor voltage V FB were measured using several electric and photoelectric techniques. Values of these parameters obtained on structures with different gate areas decrease monotonically with increasing parameter R, defined as the ratio of the gate perimeter to the gate area. Such behavior confirmed results obtained on MOS structures on silicon substrate and also supported our hypothesis that the mechanical stress in the dielectric layer under the metal gate causes non uniform distribution of some parameters over the gate area of MOS structure.

2

An active power filter based on a hybrid converter topology – Part 1

88%

Gwóźdź M., Ciepliński Ł., Gwóźdź M., Ciepliński Ł.

Bulletin of the Polish Academy of Sciences: Technical Sciences

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2021

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issue 1

3

Epitaxial graphene perfection vs. SiC substrate quality

88%

Teklinska D., Kosciewicz K., Grodecki K., Tokarczyk M., Kowalski G., Strupinski W., Olszyna A., Baranowski J.

Open Physics

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2011

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vol. 9

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issue 2

446-453

EN

Polytype instability of SiC epitaxial films was the main focus of attention in the experiment performed since this factor has a decisive influence on graphene growth, which was the second stage of the experiment. Layers deposited in various initial C/Si ratios were analyzed. Our observations indicate that the initial C/Si ratio in epitaxial growth is a crucial parameter determining which polytype will be grown, in particular for cubic (3C) or hexagonal (4H) polytypes. If the initial C/Si ratio was close to its final value, the dominant polytype was 4H. On the other hand, when the initial C/Si ratio was close to zero, 3C became the major polytype in spite of a non favourable growth temperature. The results for graphene growth on an epi-SiC layer and a bulk substrate, in which case the dominant polytype was 4H, are also presented. These results indicate that layers on epitaxial 4H-SiC are thicker, more relaxed and have better quality in comparison with samples on 4H-SiC substrates. Morphology and defects in SiC epilayers were analyzed using Nomarsky optical microscopy, scanning electron microscopy (SEM) and high resolution X-ray diffraction (XRD). Graphene quality was characterized by Raman spectroscopy.

4

TiAl-based Ohmic Contacts to p-type 4H-SiC

88%

Martychowiec A., Kwietniewski N., Kondracka K., Werbowy A., Sochacki M., Martychowiec A., Kwietniewski N., Kondracka K., Werbowy A., Sochacki M.

International Journal of Electronics and Telecommunications

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2021

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vol. 67

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issue 3

5

Modelling of changes in the resistivity of semi-insulating materials

88%

Suproniuk M., Suproniuk M.

Metrology and Measurement Systems

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2021

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vol. 28

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issue 3

6

Superconductivity in covalent semiconductors

88%

Iakoubovskii K.

Open Physics

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2009

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vol. 7

|

issue 4

654-662

EN

This review covers recent advances in superconductivity of diamond, Si, SiC, group III–V and II–IV semiconductors, metal-intercalated graphite and fullerites. The results are critically analyzed and prospects are given for future research directions. In particular, it is argued that the highest transition temperatures of ∼9 K in diamond and 11.5 K in CaC6 can further be enhanced and that no reliable evidence exists yet for superconductivity in III-V semiconductors.

7

Development of Superior Thermal Protective Coating on Carbon Composites

88%

Bae S. B., Lee J. E., Paik J. G., Cho N. C., Lee H. I., Bae S. B., Lee J. E., Paik J. G., Cho N. C., Lee H. I.

Archives of Metallurgy and Materials

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2020

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vol. 65

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issue 4

8

Corrosion and thermal shock resistance of metal (Cu, Al) matrix composites reinforced by SiC particles

75%

Strojny-Nędza A., Egizabal P., Pietrzak K., Zieliński R., Kaszyca K., Piątkowska A., Chmielewski M., Strojny-Nędza A., Egizabal P., Pietrzak K., Zieliński R., Kaszyca K., Piątkowska A., Chmielewski M.

Bulletin of the Polish Academy of Sciences: Technical Sciences

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2020

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issue 5

9

Edge termination design for 1.7 kV silicon carbide p-i-n diodes

75%

Taube A., Sochacki M., Taube A., Sochacki M.

Bulletin of the Polish Academy of Sciences: Technical Sciences

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2020

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issue 2

10

Current-fed quasi-Z-source H7 inverter with reduced stress on SiC power devices

75%

Trochimiuk P., Zdanowski M., Rabkowski J.

Bulletin of the Polish Academy of Sciences: Technical Sciences

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2019

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issue 6

11

Silicon Carbide Fabrication by Infiltration of Molten Fe-Si Alloy Through Two-Step Reaction Sintering

75%

Hanada Y., Xiao Y., Sonoda A., Kang H.-G., Nagayoshi H., Yamamoto A., Tokunaga T., Hanada Y., Xiao Y., Sonoda A., Kang H.-G., Nagayoshi H., Yamamoto A., Tokunaga T.

Archives of Metallurgy and Materials

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2019

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vol. 64

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issue 4

Refine search results

Distributions of electric parameters in MOS structures on 3C-SiC substrate

An active power filter based on a hybrid converter topology – Part 1

Epitaxial graphene perfection vs. SiC substrate quality

TiAl-based Ohmic Contacts to p-type 4H-SiC

Modelling of changes in the resistivity of semi-insulating materials

Superconductivity in covalent semiconductors

Development of Superior Thermal Protective Coating on Carbon Composites

Corrosion and thermal shock resistance of metal (Cu, Al) matrix composites reinforced by SiC particles

Edge termination design for 1.7 kV silicon carbide p-i-n diodes

Current-fed quasi-Z-source H7 inverter with reduced stress on SiC power devices

Silicon Carbide Fabrication by Infiltration of Molten Fe-Si Alloy Through Two-Step Reaction Sintering