Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl
Preferences help
enabled [disable] Abstract
Number of results

Results found: 13

Number of results on page
first rewind previous Page / 1 next fast forward last

Search results

Search:
in the keywords:  roughness
help Sort By:

help Limit search:
first rewind previous Page / 1 next fast forward last
EN
The present study aims to unveil the characteristics of fully developed laminar, incompressible, pressure driven non-Newtonian liquid flow in rough circular microchannels. In the present analysis Gaussian isotropic roughness distribution in circular microchannel is considered. The effect of varying surface wall roughness and flow behavior index has been studied numerically for both the pseudo plastic and dilatant fluids. It is found out that while increasing the relative roughness for a particular flow behavior index, the frictional resistance to flow in the microchannel increases and the effect is more pronounced in the case of pseudo plastic fluids. In the case of a pseudo plastic liquid flow for a constant relative surface wall roughness, on decreasing the value of flow behavior index below 1, the frictional resistance to the flow in the channel increases. While in the case of dilatant fluids with increasing the value of flow behavior index from 1 and above for a constant relative surface wall roughness the frictional resistance to the flow in the channel decreases.
5
88%
EN
This article contains a broad overview of etch process as one of the most important top-down technologies widely used in semiconductor manufacturing and surface modification of nanostructures. In plasma etching process, the complexity comes from the introduction of new materials and from the constant reduction in dimensions of the structures in microelectronics. The emphasis was made on two types of etching processes: dry etching and wet etching illustrated by three dimensional (3D) simulation results for the etching profile evolution based on the level set method. The etching of low-k dielectrics has been demonstrated via modelling the porous materials. Finally, simulation results for the roughness formation during isotropic etching of nanocomposite materials as well as smoothing of the homogeneous materials have also been shown and analyzed. Simulation results, presented here, indicate that with shrinking microelectronic devices, plasma and wet etching interpretative and predictive modeling and simulation have become increasingly more attractive as a tool for design, control and optimization of plasma reactors.
first rewind previous Page / 1 next fast forward last
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.