Search results

1

Change of silica luminescence due to fast hydrogen ion bombardment

100%

Zhurenko V. P., Kalantaryan O. V., Kononenko S. I.

Nukleonika

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2015

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vol. 60

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issue 2

289-292

EN

This paper deals with the luminescence of silica (KV-type) induced by beam of hydrogen ions with the energy of 210 keV per nucleon. An average implantation dose of up to 3.5 × 1021 cm−3 (5 × 1010 Gy) was accumulated during irradiation over an extended period. The luminescent spectra consisted of the blue band (maximum at 456 nm) and the red band (650 nm) in the visible range. It was shown that increase in the absorption dose had an effect on the silica luminescence. It was found that the most significant changes in the spectrum occurred during the dose accumulation in the region of 550–700 nm. The shape of the spectrum of the luminescent radiation in this wavelength range was affected both by the oxygen deficient centres (blue band) and non-bridging oxygen hole centers (red band). Mathematical processing of the experimental spectra permitted to identify contributions to the luminescent radiation coming from both types of defects.

2

Ion Beam Induced Surface Modification of ta-C Thin Films

100%

Berova M., Sandulov M., Tsvetkova T., Kitova S., Bischoff L., Boettger R.

Acta Physica Polonica A

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2017

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vol. 132

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issue 2

299-301

EN

Thin film samples (d ≈40 nm) of tetrahedral amorphous carbon (ta-C), deposited by filtered cathodic vacuum arc, were implanted with Ga⁺ at ion energy E =20 keV and ion fluences D=3×10¹⁴-3×10¹⁵ cm¯² and N⁺ with the same energy and ion fluence D=3×10¹⁴ cm¯². The Ga⁺ ion beam induced surface structural modification of the implanted material, displayed by formation of new phase at non-equilibrium condition, which could be accompanied by considerable changes in the optical properties of the ta-C films. The N⁺ implantation also results in modification of the surface structure. The induced structural modification of the implanted material results in a considerable change of its topography and optical properties. Nanoscale topography and structural properties characterisation of the Ga⁺ and N⁺ implanted films were performed using atomic spectroscopy analysis. The observed considerable surface structural properties modification in the case of the higher fluence Ga⁺ implanted samples results from the relatively high concentration of introduced Ga⁺ atoms, which is of the order of those for the host element.

3

Effects of ion implantation on yellow luminescence in unintentional doped n-type GaN

100%

Zhang L., Zhang X., You W., Yang Z., Wang W., Ge Q., Liu Z.

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vol. 6

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issue 2

283-288

EN

The effects of Si, O, C and N ion implantation with different implantation doses on yellow luminescence (YL) of GaN have been investigated. The as-grown GaN samples used in the work were of unintentional doped n-type, and the photoluminescence (PL) spectra of samples had strong YL. The experimental results showed that YL of ion implanted samples exhibited marked reductions compared to samples with no implantation, while the near band edge (NBE) emissions were reduced to a lesser extent. The deep-level centers associated with YL may be produced in GaN films by O and C ion implantation, and identities of these deep-level centers were analyzed. It was also found that the dose dependence of YL was analogous with the one of the intensity ratios of YL to the near band edge (NBE) emission (I YL/I NBE) for ion implanted samples. The possible reason for this comparability has been proposed.

4

Modification of polypropylene membranes by ion implantation

88%

Kotra-Konicka K., Kalbarczyk J., Gac J. M.

Chemical and Process Engineering

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2016

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vol. 37

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issue 3

5

Application of poly-energy implantation with H+ ions for additional energy levels formation in GaAs dedicated to photovoltaic cells

75%

Węgierek P., Pietraszek J.

Archives of Electrical Engineering

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2019

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vol. 68

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issue 4

6

Comparative studies of the optical absorption coefficient spectra in the implanted layers in silicon with the use of nondestructive spectroscopic techniques

63%

Dorywalski K., Chrobak Ł., Maliński M., Dorywalski K., Chrobak Ł., Maliński M.

Metrology and Measurement Systems

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2020

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vol. 27

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issue 2

Refine search results

Change of silica luminescence due to fast hydrogen ion bombardment

Ion Beam Induced Surface Modification of ta-C Thin Films

Effects of ion implantation on yellow luminescence in unintentional doped n-type GaN

Modification of polypropylene membranes by ion implantation

Application of poly-energy implantation with H+ ions for additional energy levels formation in GaAs dedicated to photovoltaic cells

Comparative studies of the optical absorption coefficient spectra in the implanted layers in silicon with the use of nondestructive spectroscopic techniques