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Structural and Electrical Properties of SnO₂:F Thin Films Prepared by Chemical Vapor Deposition Method

100%
Najafi N., Rozati S.
Acta Physica Polonica A
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2017
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vol. 131
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issue 2
222-225
EN
Fluorine doped tin oxide (FTO) thin films were deposited onto glass substrate at different substrate temperatures by a simple and inexpensive method of air pressure chemical vapor deposition. The substrate temperature was kept constant at about 500°C as the optimum temperature, and air was used as both a carrier gas and the oxidizing agent. A very simple method of characterization were carried on to investigate the electrical and structural properties of the prepared thin films. The electrical parameters variations showed that these parameters vary with substrate temperature ranging from an insulator thin film to a highly conductive layer. X-ray diffraction also revealed the structure to be polycrystalline at higher temperatures compared to amorphous structure for lower temperatures.
2
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The use of laser technology to shape properties of the contacts of silicon solar cells and their structure

100%
Musztyfaga-Staszuk M., Dobrzański L.
Open Physics
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2014
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vol. 12
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issue 12
836-842
EN
The paper presents the results of the investigation of the front contact manufactured using silver pastes (based on experimentally prepared silver powder) on monocrystalline silicon solar cells in order to reduce contact resistance. Various deposition and fabrication techniques were applied to improve the electrical properties of contacts. The aim of the paper was to apply an unconventional method (selective laser sintering) to improve the quality of forming contacts of silicon solar cells. The topography of both the melted/sintered contact and textured silicon was investigated using atomic force microscopy. Resistance of front electrodes was measured using the Transmission Line Model (TLM). Both surface topography and cross section of front contacts were researched using the scanning electron microscopy.
3
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Effect of Reactor Pressure on Electrical and Structural Properties of Diamond Films Grown by Hot-Filament CVD

88%
Ullah M., Ahmed E., Rana A.
|
EN
Polycrystalline diamond films with preferred (111) and (222) facets were fabricated inside hot filament chemical vapour deposition reactor on silicon wafers using a mixture of 1% methane in hydrogen at various reactor pressures ranging from 10 to 50 mbar. Regarding characterization of diamond films, internal texture, surface morphology, quality of diamond and electrical conductivity were investigated using X-ray diffraction, scanning electron microscopy, the Raman spectroscopy and four-point-probe van der Pauw techniques, respectively. Results of these studies demonstrate that polycrystalline diamond structure is grown in random orientation with (111) facet being dominant showing sharp grain boundaries. Moreover, growth rate was found to increase with pressure up to 20 mbar and then decreased for further rise in pressure. That is why grain density is high with relatively smaller grains at higher pressures caused by higher nucleation rates. In contrast, electrical resistivity decreased ≈3 orders of magnitude showing a minimum at 2.9×10⁶ Ω cm as pressure was increased in the reactor. Reactor pressure during film growth resulted in poor surface morphology, absence of sp³ bonds and low resistivity. Hence, decrease of resistivity makes diamond films desirable for many electrical applications in semiconducting/electronic devices.
4
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Fowler-nordheim tunnelling in Au−TiO2−Ag film structures

75%
Aarik J., Bichevin V., Jõgi I., Käämbre H., Laan M., Sammelselg V.
Open Physics
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2004
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vol. 2
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issue 1
147-159
EN
I-V-characteristics have been measured for Au−TiO2−Ag structures with TiO2 layers of 30 and 180 nm thickness. The TiO2 films were grown by atomic layer deposition (ALD) technique. In the case of negative bias on the Au electrode, the conduction currents through TiO2 layers follow the Fowler-Nordheim formula for field emission over several orders of magnitude. The bulk of the currents may be attributed to tunnelling, seemingly through a Schottky barrier at the Au−TiO2 junction. In the case of reversed polarity the currents are also observed, but cannot be interpreted as tunnelling.
5
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Influence of iodine on the electrical properties of magnesium phthalocyanines thin film devices

75%
Varghese A., Menon C.
|
EN
The influence of iodine on the electrical properties of sandwich structures of magnesium phthalocyanine (Mg Pc) thin films with gold and aluminium electrodes has been investigated. The various electrical properties and different electrical parameters of the iodine-doped Mg Pc thin film devices have been estimated and compared with the values of normal Mg Pc devices from the analysis of the current-voltage characteristics. Generally samples showed an asymmetric conductivity both under forward and reverse bias. From our study we found that iodine doped Mg Pc films showed an enhanced electrical conductivity of nearly ten times that of typical Mg Pc. At low voltages the films showed an ohmic conduction with a hole concentration of P0 = 6.34 × 1018 m−3 and hole mobility μ = 9.16 × 10−5 m 2 V−1 s−1, whereas at higher voltage levels the conduction is dominated by space charged limited conduction (SCLC) with a discrete trapping level of 1.33 × 1022 m−3 at 0.63 eV above the valance band edge. The ratio of the free charges to trapped charges (trapping factor) for the doped samples was found to be 1.07 × 10−7. Furthermore the reverse conduction mechanisms have also been investigated. From the current limitations in the reverse condition a strong rectifying behaviour was evident which was attributed to Poole-Frankel emission with a field-lowering coefficient of value 2.24 × 10−5 eV m1/2 V−1/2.
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