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Ceria doped with aliovalent cations, such as rare earth oxides, has been considered as one of the most promising candidate electrolyte materials for intermediate temperature solid oxide fuel cells. In this study, high purity cerium nitrate, samarium nitrate and erbium nitrate salts were used to obtain ceria-based solid solutions Ce_{0.80}Sm_{0.20}O_{1.90} (SDC), Ce_{0.80}Sm_{0.15}Er_{0.05}O_{1.90} (ESDC5), Ce_{0.80}Sm_{0.10}Er_{0.10}O_{1.90} (ESDC10) through the cellulose templating method. Crystal structure and microstructure were characterized by means of X-ray diffraction and scanning electron microscopy, respectively. X-ray diffraction results indicate that a single-phase fluorite structure formed at a relatively low calcination temperature, 500°C. The relative densities of the sintered pellets were higher than 93%. The electrical properties of doped and co-doped ceria electrolytes in the temperature range 300-750°C were analyzed by using electrochemical impedance spectroscopy. The singly doped ceria at 750°C showed the highest ionic conductivity with less activation energy.
EN
Specimens of polymer matrix - ceramic TiO2 filler composites were prepared. The contribution of the filler content on the electrical conductivity and energy storage properties of the samples was examined. I–V and Isothermal Polarization/Depolarization Current (IPC/IDC) measurements were conducted. Dc conductivity values directly calculated from the I–V curves exhibited excellent agreement with corresponding values derived from the IPC/IDC recordings. Standard models were employed for fitting the IPC/IDC data. In specific, the short and the very long depolarization times were fitted by use of power laws of different slopes, while the intermediate depolarization times were fitted as a sum of three exponential decays. The present study reveals a strong dependence of the depolarization and polarization processes, as well as of the dc conductivity, on the filler concentration.
EN
Structural studies of (Ag3AsS3)x (As2S3)1−x chalcogenide superionic glasses in the compositional range x = 0.3–0.9 were performed by scanning electron microscopy. Temperature and compositional dependences of transmission coefficient, electrical conductivity, and activation energy were investigated
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Dielectric properties of Ba3Sr2DyTi3V7O30 ceramics

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EN
A polycrystalline sample, Ba3Sr2DyTi3V7O30, with tungsten bronze structure was prepared by a mixed-oxide method at high temperature (950°C). Preliminary structural analysis of the compound showed an orthorhombic crystal structure at room temperature. Surface morphology of the compound was studied by scanning electron microscopy. The dielectric anomaly at 321°C may be attributed to the ferro-paraelectric phase transitions. This was also confirmed from the appearance of a hysteresis loop. The nature of variation of the ac conductivity and value of activation energy at different temperature regions, suggest that the conduction process is of mixed-type (i.e., ionic-polaronic and space charge generated from the oxygen ion vacancies).
EN
Structural, elastic, electronic, magnetic and thermoelectric properties of the Heusler compounds: Zr₂PdAl, Zr₂PdGa, and Zr₂PdIn are performed using generalized gradient approximation with exchange-correlation function of the Perdew-Burke-Ernzerhof. The elastic constants are calculated at P=0 GPa. From the obtained elastic parameters, it is inferred that these compounds, with the Hg₂TiCu-type structure, are elastically stable and ductile in nature. The calculated density of states, magnetic moments and band structure are also given. The band structures of these compounds reveal that all of them have almost half metallic character with the narrow indirect band gap in the minority spin channel that amounts to 0.36, 0.46, and 0.40 eV for Zr₂PdAl, Zr₂PdGa, and Zr₂PdIn, respectively. The total spin magnetic moments (M_{tot}) of the considered compounds are very close to integer value 3, which satisfies a Slater-Pauling type rule for localized magnetic moment systems M_{tot}=Z_{T}-18, where Z_{T}=21 is the number of valence electrons in the primitive cell. The thermoelectric properties of these materials are discussed on the basis of the Seebeck coefficients, electrical and thermal conductivity relative to relaxation time as a function of temperature, at the Fermi level, using the Boltzmann transport theory. After several browse in the literature, the obtained results are the first predictions of the physical properties for the inverse full-Heusler compounds Zr₂PdZ (Z = Al, Ga and In).
EN
Thin films of copper selenide (CuSe) were physically deposited layer-by-layer up to 5 layers using thermal evaporation technique onto a glass substrate. Various film properties, including the thickness, structure, morphology, surface roughness, average grain size and electrical conductivity are studied and discussed. These properties are characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), ellipsometer and 4 point probe at room temperature. The dependence of electrical conductivity, surface roughness, and average grain size on number of layers deposited is discussed.
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