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Silicon solar cells with Al2O3 antireflection coating

100%

Dobrzański L., Szindler M., Drygała A., Szindler M.

Open Physics

2014

vol. 12

issue 9

666-670

The paper presents the possibility of using Al2O3 antireflection coatings deposited by atomic layer deposition ALD. The ALD method is based on alternate pulsing of the precursor gases and vapors onto the substrate surface and then chemisorption or surface reaction of the precursors. The reactor is purged with an inert gas between the precursor pulses. The Al2O3 thin film in structure of the finished solar cells can play the role of both antireflection and passivation layer which will simplify the process. For this research 50×50 mm monocrystalline silicon solar cells with one bus bar have been used. The metallic contacts were prepared by screen printing method and Al2O3 antireflection coating by ALD method. Results and their analysis allow to conclude that the Al2O3 antireflection coating deposited by ALD has a significant impact on the optoelectronic properties of the silicon solar cell. For about 80 nm of Al2O3 the best results were obtained in the wavelength range of 400 to 800 nm reducing the reflection to less than 1%. The difference in the solar cells efficiency between with and without antireflection coating was 5.28%. The LBIC scan measurements may indicate a positive influence of the thin film Al2O3 on the bulk passivation of the silicon.

Temperature Effect on the Growth Rate and Physical Characteristics of SnO2 Thin Films Grown by Atomic Layer Deposition

75%

Kim D., Kim D. H., Riu D.-H., Choi B. J.

Archives of Metallurgy and Materials

2018

vol. 63

issue 2

Structural study of TiO2 thin films by micro-Raman spectroscopy

63%

Niilisk A., Moppel M., Pärs M., Sildos I., Jantson T., Avarmaa T., Jaaniso R., Aarik J.

Open Physics

2006

vol. 4

issue 1

105-116

The Raman spectroscopy method was used for structural characterization of TiO2 thin films prepared by atomic layer deposition (ALD) and pulsed laser deposition (PLD) on fused silica and single-crystal silicon and sapphire substrates. Using ALD, anatase thin films were grown on silica and silicon substrates at temperatures 125–425 °C. At higher deposition temperatures, mixed anatase and rutile phases grew on these substrates. Post-growth annealing resulted in anatase-to-rutile phase transitions at 750 °C in the case of pure anatase films. The films that contained chlorine residues and were amorphous in their as-grown stage transformed into anatase phase at 400 °C and retained this phase even after annealing at 900 °C. On single crystal sapphire substrates, phase-pure rutile films were obtained by ALD at 425 °C and higher temperatures without additional annealing. Thin films that predominantly contained brookite phase were grown by PLD on silica substrates using rutile as a starting material.

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2 Open Physics

1 Archives of Metallurgy and Materials

1 2018

1 2014

1 2006

1 Aarik J.

1 Avarmaa T.

1 Choi B. J.

1 Dobrzański L.

1 Drygała A.

1 Jaaniso R.

1 Jantson T.

1 Kim D.

1 Kim D. H.

1 Moppel M.

1 Niilisk A.

1 Pärs M.

1 Riu D.-H.

1 Sildos I.

1 Szindler M.

Search results

Silicon solar cells with Al2O3 antireflection coating

Temperature Effect on the Growth Rate and Physical Characteristics of SnO2 Thin Films Grown by Atomic Layer Deposition

Structural study of TiO2 thin films by micro-Raman spectroscopy