Results found: 3

Number of results on page

Search results

Search:
in the keywords: MOS structures

Sort By:

Limit search:

Analysis of A-DLTS spectra of MOS structures with thin NAOS SiO2 layers

100%

Hockicko P., Bury P., Sidor P., Kobayashi H., Takahashi M., Yanase T.

Open Physics

2011

vol. 9

issue 1

242-249

A set of MOS structures with thin SiO2 layers prepared by nitric acid oxidation (NAOS) method was investigated using acoustic deep level transient spectroscopy (A-DLTS) to explain the role of annealing treatment (post-oxidation annealing (POA) and post-metallization annealing (PMA)) at different conditions on the distribution of interface states. The activation energies of interface states and the corresponding capture cross-section were calculated both from Arrhenius plots constructed for individual peaks of the A-DLTS spectra and applying the method of modeling of measured acoustic spectra. The energy distribution of the interface states was determined also from the dependence of acoustoelectric response signal (ARS) on the external bias voltage (U ac - V G curves). By comparing the A-DLTS spectra, U ac - V G characteristics and some electrical measurements (G-V, I-V curves) of investigated MOS structures with no treatment with those treated with POA and/or PMA, the role of individual treatments was observed. The definite decrease of the interface states in the structures with the PMA treatment in comparison with the POA treatment was confirmed too.

Application of Metal-Oxide-Semiconductor structures containing silicon nanocrystals in radiation dosimetry

100%

Nesheva D., Nedev N., Curiel M., Dzhurkov V., Arias A., Manolov E., Mateos D., Valdez B., Bineva I., Herrera R.

Open Physics

2015

vol. 13

issue 1

This article makes a brief review of the most important results obtained by the authors and their collaborators during the last four years in the field of the development of metal-insulator-silicon structures with dielectric film containing silicon nanocrystals, which are suitable for applications in radiation dosimetry. The preparation of SiOx films is briefly discussed and the annealing conditions used for the growth of silicon nanocrystals are presented. A two-step annealing process for preparation of metal-oxide-semiconductor structures with three-layer gate dielectrics is described. Electron Microscopy investigations prove the Si nanocrystals growth, reveal the crystal spatial distribution in the gate dielectric and provide evidences for the formation of a top SiO2 layerwhen applying the two-step annealing. Two types of MOS structures with three region gate dielectricswere fabricated and characterized by high frequency capacitance/conductancevoltage (C/G-V) measurements. The effect of gamma and ultraviolet radiation on the flatband voltage of preliminary charged metal-oxide-semiconductor structures is investigated and discussed.

Acoustic spectroscopy and electrical characterization of SiO2/Si structures with ultrathin SiO2 layers formed by nitric acid oxidation

88%

Bury P., Kobayashi H., Takahashi M., Imamura K., Sidor P., ÄŒernobila F. e.

Open Physics

2009

vol. 7

issue 2

237-241

Ultrathin silicon dioxide (SiO2) layers formed on Si substrate with nitric acid have been investigated using both acoustic deep-level transient spectroscopy (A-DLTS) and electrical methods to characterize the interface states. The set of SiO2/Si structures formed in different conditions (reaction time, concentrations of nitric acid (HNO3), and SiO2 thickness [3â€“9 nm]) was prepared. The leakage current density was decreased by post-oxidation annealing (POA) treatment at 250Â°C in pure nitrogen for 1 h and/or post-metallization annealing (PMA) treatment at 250Â°C in a hydrogen atmosphere for 1 h. All structures of the set, except electrical investigation, current-voltage (I - V), and capacitance â€” voltage (C - V) measurements, were investigated using A-DLTS to find both the interface states distribution and the role of POA and/or PMA treatment on the interface-state occurrence and distribution. The evident decreases of interface states and shift of their activation energies in the structures with PMA treatment in comparison with POA treatment were observed in most of the investigated structures. The results are analyzed and discussed.

Refine search results

3 Open Physics

1 2015

1 2011

1 2009

2 Bury P.

2 Kobayashi H.

2 Sidor P.

2 Takahashi M.

1 Arias A.

1 Bineva I.

1 Curiel M.

1 Dzhurkov V.

1 Herrera R.

1 Hockicko P.

1 Imamura K.

1 Manolov E.

1 Mateos D.

1 Nedev N.

1 Nesheva D.

1 Valdez B.

1 Yanase T.

1 ÄŒernobila F. e.

Search results

Analysis of A-DLTS spectra of MOS structures with thin NAOS SiO2 layers

Application of Metal-Oxide-Semiconductor structures containing silicon nanocrystals in radiation dosimetry

Acoustic spectroscopy and electrical characterization of SiO2/Si structures with ultrathin SiO2 layers formed by nitric acid oxidation