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Fabrication of Al2O3/Al structure by nitric acid oxidation at room temperature

100%
Iwata T., Matsumoto T., Terakawa S., Kobayashi H.
Open Physics
|
2010
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vol. 8
|
issue 6
1015-1020
EN
A thick Al2O3/aluminum (Al) structure has been fabricated by oxidation of Al with 68wt% and 98wt% nitric acid (HNO3) aqueous solutions at room temperature. Measurements of the Al2O3 thickness vs. the oxidation time show that reaction and diffusion are the rate-determining steps for oxidation with 68wt% and 98wt% HNO3 solutions, respectively. Observation of transmission electron micrographs shows that the Al2O3 layer formed with 68wt% HNO3 has a structure with cylindrically shaped pores vertically aligned from the Al2O3 surface to the Al2O3/Al interface. Due to the porous structure, diffusion of HNO3 proceeds easily, resulting in the reaction-limited oxidation mechanism. In this case, the Al2O3/Al structure is considerably rough. The Al2O3 layer formed with 98wt% HNO3 solutions, on the other hand, possesses a denser structure without pores, and the Al2O3/Al interface is much smoother, but the thickness of the Al2O3 layer formed on crystalline Al regions is much smaller than that on amorphous Al regions. Due to the relatively uniform Al2O3 thickness, the leakage current density flowing through the Al2O3 layer formed with 68wt% HNO3 is lower than that formed with 98wt% HNO3.
2
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Study of density of interface states in MOS structure with ultrathin NAOS oxide

88%
Jurečka S., Kobayashi H., Kim W.-B., Takahashi M., Pinčík E.
Open Physics
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2012
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vol. 10
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issue 1
210-217
EN
The quality of the interface region in a semiconductor device and the density of interface states (DOS) play important roles and become critical for the quality of the whole device containing ultrathin oxide films. In the present study the metal-oxide-semiconductor (MOS) structures with ultrathin SiO2 layer were prepared on Si(100) substrates by using a low temperature nitric acid oxidation of silicon (NAOS) method. Carrier confinement in the structure produces the space quantization effect important for localization of carriers in the structure and determination of the capacitance. We determined the DOS by using the theoretical capacitance of the MOS structure computed by the quantum mechanical approach. The development of the density of SiO2/Si interface states was analyzed by theoretical modeling of the C-V curves, based on the superposition of theoretical capacitance without interface states and additional capacitance corresponding to the charges trapped by the interface states. The development of the DOS distribution with the passivation procedures can be determined by this method.
3
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Performance Analysis of VoIP Data over IP Networks

75%
Strzęciwilk D., Strzęciwilk D.
International Journal of Electronics and Telecommunications
|
2021
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vol. 67
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issue 4
4
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Low Delay Sparse and Mixed Excitation CELP Coders for Wideband Speech Coding

75%
Dymarski P., Dymarski P.
International Journal of Electronics and Telecommunications
|
2020
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vol. 66
|
issue 1
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