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Formation and study of mixed copper sulfide-copper telluride layers on the surface of polyamide 6

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Janickis V., Žalenkienė S.
Open Chemistry
|
2010
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vol. 8
|
issue 4
709-724
EN
The layers of mixed copper chalcogenides, CuxS-CuyTe, were formed on the surface of polyamide using solutions of potassium and sodium telluropentathionates, K2TeS4O6 and Na2TeS4O6, respectively, and of telluropentathionic acid, H2TeS4O6, as precursors of chalcogens. The concentration of sorbed chalcogens increased with the increasing time of the treatment, concentration and temperature of precursor solution. CuxS-CuyTe layers are formed on the surface of polyamide after the treatment of chalcogenized polymer with Cu(II/I) salt solution. The concentration of copper in the layer increases with the increase of chalcogenization duration, concentration and the temperature of chalcogenization solution. In the surface of CuxS-CuyTe layers various copper, sulfur, tellurium and oxygen compounds (Cu2S, CuS, S8, CuxS, CuyTe, Cu(OH)2 and TeO2) were present. Chalcogenides were the major components in the layer. Chalcogenide phases - digenite, Cu1.8S, djurleite, Cu1.9375S, anilite, Cu7S4, geerite, CuS2, chalcocite, Cu2S, tetragonal Cu3.18Te2, Cu2.72Te, hexagonal Cu2Te, Cu4Te3, Cu1.80Te, Cu1.85Te2, and orthorhombic vulcanite, CuTe were identified in the layers by X-ray diffraction. Electrical sheet resistance of CuxS-CuyTe layers vary from ∼ 1.0 kW cm−2 to 4×103 kΩ cm−2. It is concluded that the formation of chalcogenide layers proceeds in the form of islands which grow into larger agglomerates. Use of the gathered data enables design and formation of the CuxS-CuyTe layers with desired conductivities. [...]
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Formation and properties of copper chalcogenides thin films on polymers formed using sodium telluropentathionate

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Šukytė J., Ivanauskas R.
Open Chemistry
|
2013
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vol. 11
|
issue 7
1163-1171
EN
The preparative conditions were optimized to get chalcogens layers on the polymer - polyamide PA surface by sorption at room temperature using sodium telluropentathionate, Na2TeS4O6. Further interaction of chalcogenized dielectric with copper’s (I/II) salt solution leads to the formation of mixed CuxSy-CuxTey layers. Optical, electrical and surface characteristics of the layers are highly controlled by the deposition parameters. The stoichiometry of these layers was established by UV-Visible and AA spectrometry. Optical absorption (transmittance) experiments show the samples are of high optical quality. The band gaps of thin films were obtained from their optical absorption spectra, which were found in the range of 1.44–2.97 eV. XRD was used in combination with AFM to characterize chalcogenides layers’ structural features. XRD analysis confirmed the formation of mixed copper chalcogenides’ layers in the surface of PA with binary phases such as Cu2Te, Cu3.18Te2, copper telluride, Cu2.72Te2, vulcanite, CuTe, anilite, Cu7S4 and copper sulfide, Cu1.8S. The crystallite sizes of thin films calculated by the Scherer formula were found to be in the range of 3.07–13.53 nm for CuxSy crystallites and 4.06–20.79 nm for CuxTey crystallites. At room temperature an electrical resistance of CuxSy-CuxTey layers varies from 3.0×103 kΩ□−1 to 1.0 kΩ□−1. [...]
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