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1
Content available remote

Dual-Frequency Plasma Enhanced Chemical Vapor Deposition of Diamond-Like Carbon Thin Films

100%
Jamshidi R., Hosseini S., Ahmadizadeh Y.
Acta Physica Polonica A
|
2012
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vol. 122
|
issue 1
230-235
EN
Dual-frequency plasma enhanced chemical vapor deposition was used to grow diamond-like carbon thin films from CH_4, H_2 gas mixture. The effects of radio frequency, microwave power, and gas ratio were investigated. Various species have been identified in the CH_4-H_2 plasma using optical emission spectroscopy and their effects on film properties have been studied. Increasing the RF power to 400 W, the variation trend of refractive index and CH, C_2 intensity ratios change beyond the 300 W, but the growth rate shows the continuous increasing character from 6 to 11.6 nm/min. Increasing the hydrogen content in the system, the intensity ratio of CH, C_2, CH^{+} and growth rate show decreasing tendency and the refractive index rises from 1.98 to 2.63. Adding MW produced plasma to the system grows the refractive index to 2.88 and growth rate to 10.8 nm/min. The water contact angle rises from 58.95° to 73.74° as the RF power increases to 300 W but begins to reduce until 400 W. In addition, the contact angle shows a growing tendency by increasing the hydrogen flow to the chamber. In addition, the structures of the films were investigated by the Raman spectroscopy.
2
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Growth Processes of ZnTe Epilayers Deposited by MBE on GaAs(100) Vicinal Surfaces - Studies by Static and Dynamic RHEED

63%
Sadowski J., Dziuba Z., Iierman M. A.
Acta Physica Polonica A
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1995
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vol. 87
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issue 1
225-228
EN
Static and dynamic reflection high energy electron diffraction (RHEED) has been applied for studying the initial growth processes of ZnTe crystallized by molecular beam epitaxy (MBE) on vicinal surfaces of GaAs(100) sub­strates. Atomically smooth ZnTe epilayers have been grown by MBE when in situ thermal desorption of the substrate protecting oxide layer was per­formed in the ultra high vacuum environment of the vacuum growth chamber just before the growth of ZnTe started. By gradual increasing of the substrate temperature of the crystallized ZnTe epilayers from 300°C to 420°C, when recording the RHEED intensity oscillations at these and eleven intermittent temperatures, it has been shown that the transition from the 2D-nucleation growth mechanism to the step-flow growth mechanism of ZnTe occurs at 410°C. Measuring periods of RHEED intensity oscillations recorded during the MBE growth processes it has been demonstrated that the growth rate of ZnTe at constant fluxes of the constituent elements decreases with increasing temperature from 0.37 ML/s at 300°C to 0.22 ML/s at 400°C.
3
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MBE Growth of YbTe on GaAs(100) and BaF_{2}(111) Substrates

63%
Sadowski J., Dynowska E., Kowalczyk L.
Acta Physica Polonica A
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1995
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vol. 88
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issue 5
1028-1032
EN
The structural properties of MBE grown YbTe layers were investigated by X-ray diffraction methods and photoluminescence measurements. YbTe films were grown on the ZnTe and CdTe buffer layers crystallised on the GaAs(100) 2° off oriented substrates and on the BaF_{2}(100) substrates. In the case of GaAs substrates the two-dimensional growth mode of YbTe was observed on reflection high energy electron diffraction picture. Results of the X-ray rocking curve and photoluminescence excitation measurements indicate that the structural properties of YbTe films are comparable to the properties of the MBE grown ZnTe and CdTe layers on the GaAs(100) substrates. The measured values of the YbTe lattice constant parallel and perpendicular to the growth plane show that the 1 μm thick layers are partially strained. The full width at half maximum values of the X-ray rocking curves are the smallest (900 arc seconds) for the YbTe films crystallised on the 2 μm thick CdTe bucher layer grown on the GaAs(100) substrate. In the case of BaF_{2}(111) substrate the two-dimensional MBE growth mode of YbTe was not observed.
4
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MOCVD of Perovskites with Metallic Conductivity

63%
Gorbenko O., Kaul A., Molodyk A., Novozhilov M., Bosak A., Babushkina N., Belova L., Krause U., Wahl G.
Acta Physica Polonica A
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1997
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vol. 92
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issue 1
237-242
EN
Single source MOCVD techniques were used to prepare perovskite films with metallic conductivity (CaRuO_{3}, LaNiO_{3}, La_{0.5}Sr_{0.5}CoO_{3} and (La,Pr)_{0.7}(Sr,Ca)_{0.3}MnO_{3}). Structural and electrical properties of the epitaxial layers on the coherent substrates are close to that of the films grown by pulsed laser deposition and magnetron sputtering. Peculiarities of the growth occur on the worse matched substrates, such as a mixture of two orientations, each aligned in the plane of the interface (LaNiO_{3}/MgO) and variant structures in the films on yttrium stabilized zirconia. X-ray diffraction of the films indicates pseudocubic lattice for all R_{1-x}A_{x}MO_{3} films in spite of the distortions in the bulk material. The dependence of metal-insulator transition in R_{1-x}A_{x}MnO_{3} on the nature of R and A and film-substrate lattice mismatch was studied.
5
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Structural and Electrical Properties of Low Concentration SnTe Layers and PbTe/SnTe Heterostructures Grown by MBE

63%
Sadowski J., Grodzicka E., Dynowska E., Adamczewska J., Domagała J., Przedpelski W.
Acta Physica Polonica A
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1997
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vol. 92
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issue 5
967-970
EN
We analyse properties of thin SnTe layers and PbTe/SnTe heterostructures grown by MBE on BaF_{2}(111) substrates. Reflection high energy electron diffraction patterns registered during MBE growth of the samples as well as post-growth X-ray diffraction measurements evidence a high structural perfection of 0.6 μm thick SnTe layers and (50 Å PbTe)/(50 Å SnTe) superlattices. The full width at half maximum values of (222) X-ray rocking curves measured for these thin SnTe layers crystallized in the optimal MBE growth conditions are about 300 arcsec; the carrier concentrations can be tuned from 5×10^{19} cm^{-3} to 10^{2 1} cm^{-3} depending on the MBE process parameters.
6
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MBE Growth and Properties of ZnYbTe Layers

63%
Sadowski J., Szamota-Sadowska K., Świątek K., Kowalczyk L., Abounadi A., Rajira A.
Acta Physica Polonica A
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1996
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vol. 90
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issue 5
1060-1064
EN
The MBE grown ZnYbTe layers were characterized by X-ray diffraction, photoluminescence and reflectivity measurements. The MBE growth conditions allowing to obtain monocrystalline ZnYbTe layers were found to be metal-rich (MBE growth with excess of Zn flux). In optical measurements (photoluminescence, reflectivity), both transitions connected with ternary ZnYbTe compound and with Yb^{3+} ions were detected. The quality of ZnYbTe layers with Yb content of 3% and 1% is inferior to the quality of pure ZnTe MBE layers, which is clearly seen in the results of photoluminescence and reflectivity measurements. In the ZnYbTe layers with 3% Yb, exhibiting monocrystalline character in reflection high-energy electron diffraction and X-ray diffraction measurements, optical transitions characteristic of pure YbTe were detected. In ZnYbTe layers with 1% Yb, no transitions connected with YbTe were observed.
7
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Fabrication and Characterization of GaN/Polymer Composite p-n Junction with PEDOT Nanoparticle Interface Layer

63%
Kim M., Jin S., Choi H., Kim G., Yim K., Kim S., Nam G., Yoon H., Kim Y., Lee D., Kim J., Kim J., Leem J.
Acta Physica Polonica A
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2011
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vol. 119
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issue 6
875-879
EN
A heavily Si-doped GaN/polymer hybrid structure with p-type poly(3,4-ethylene-dioxythiophene):beta-1,3-glucan (PEDOT nanoparticle) interface layer has been fabricated. The Si-doped GaN thin film with carrier concentration of 1 × 10^{19} cm^{-3} was grown by metal-organic chemical vapor deposition. The PEDOT nanoparticle with various sizes ranging from 60 to 120 nm was synthesized via a miniemulsion polymerization process. The electrical conductivity of the PEDOT nanoparticle is less than 1.2 S/cm. The current-voltage (I-V) characteristic of the hybrid structure shows diode-like behavior. The I-V characteristic was examined in the framework of the thermionic emission model. The ideality factor of the structure without PEDOT nanoparticle interface layer is 12.9. However, the ideality factor of the hybrid structure with PEDOT nanoparticle interface layer is obtained as 1.9. The value of ideality factor is dramatically decreased by inserting the PEDOT nanoparticle interface layer.
8
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GaSb Dots Grown on GaAs Surface by Metalorganic Chemical Vapour Deposition

63%
Bożek R., Babiński A., Baranowski J. M., Stępniewski R., Klusek Z., Olejniczak W., Starowieyski K., Wróbel J.
Acta Physica Polonica A
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1995
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vol. 88
|
issue 5
974-976
EN
We report metaloorganic chemical vapour deposition growth of an anisotropic GaSb islands on GaAs (001) surface with a typical dimensions around 200 nm. Results of investigations employing scanning electron microscope, scanning tunnelling microscope and ph9tocapacitance are presented.
9
Content available remote

Homoepitaxial Growth of YBa_{2}Cu_{3}O_{7} on Single Crystal YBa_{2}Cu_{3}O_{x} Substrates

51%
Morishita T., Zama H., Shiohara Y.
Acta Physica Polonica A
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1997
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vol. 92
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issue 1
97-103
EN
a- and c-axis oriented YBa_{2}Cu_{3}O_{x} (YBCO) films were epitaxially grown on (100) and (001) YBCO single-crystal substrates, respectively, by metalorganic chemical vapor deposition under the same preparation conditions including substrate temperature. As a Ba precursor Ba(DPM)_{2}-2tetraen was adopted. This precursor increased a deposition rate for YBCO films to 50 nm/h at 140°C. The substrates were formed from a 14.5x14.5x13 mm YBCO single crystal grown by a modified top-seeded crystal pulling method. Only a few surface atomic layers remained damaged after polishing and cleaning, which however did not affect the epitaxy of film growth. The crystallinity of the interface between an epilayer and substrate was much improved compared to that on usual perovskite substrates.
10
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Synchrotron Photoemission Study of Ferromagnetic (Zn,Co)O Films

51%
Guziewicz E., Lukasiewicz M., Wachnicki L., Kopalko K., Dłużewski P., Jakiela R., Godlewski M.
Acta Physica Polonica A
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2011
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vol. 120
|
issue 6A
A-40-A-42
EN
The electronic structure of ferromagnetic (Zn,Co)O films was investigated by resonant photoemission across the Co 3p → Co 3d photoionization threshold, e.g. using photon energy between 50 eV and 66 eV. The films were grown by atomic layer deposition at temperature between 160C and 300C and they differed in distribution and content of cobalt. The maximum of the Fano resonance was observed at photon energy 63 eV, whereas the minimum at 58 eV. The difference between energy distribution curves taken at 63 eV and the one taken at 58 eV was calculated for a series of samples. It shows that the Co 3d contribution to the valence band electronic structure of ferromagnetic (Zn,Co)O films differs significantly from that of the films which show the paramagnetic response.
11
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Content available

Blue Optoelectronics in III-V Nitrides on Silicon

51%
Krost A., Dadgar A.
Acta Physica Polonica A
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2002
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vol. 102
|
issue 4-5
555-566
EN
Three simple and promising methods to grow high-quality, device-relevant gallium nitride heterostructures on silicon are presented: strain-compensation, patterning, and the insertion of low-temperature AlN interlayers. With all methods device-quality GaN can be grown. While patterning is especially interesting for light emitters, low-temperature AlN interlayers can be used universally not only for transistor structures, which require good insulation of the active layers to the Si substrate, but also for vertically contacted LEDs when doped with Si. Low-temperature AlN interlayers do not only reduce tensile stress but also improve GaN properties and strongly reduce the threading dislocation density from 10^{10} cm^{-2} to 10^9 cm^{-2} for 2 low-temperature AlN layers. Additionally, the layer quality can be enhanced by using in situ Si_xN_y masks. Best crack-free layers with dislocation densities around 10^9 cm^{-2} show X-ray rocking-curve widths around 400 arcsec and narrow photoluminescence. So far, best LEDs on Si(111) have an optical output power of 0.42 mW at 20 mA and 498 nm which is enough for simple signal applications.
12
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The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition

51%
Alevli M., Ozgit C., Donmez I.
Acta Physica Polonica A
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2011
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vol. 120
|
issue 6A
A-58-A-60
EN
In this work, we explored the influence of the low growth temperatures on the structural and optical properties of AlN films grown by plasma enhanced atomic layer deposition using trimethylaluminum and ammonia (NH_3) plasma. Structural and optical results show that AlN films grown by self-limited plasma enhanced atomic layer deposition are polycrystalline at temperatures as low as 100C.
13
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Structural and Optical Properties of Boron Nitride Grown by MOVPE

51%
Dąbrowska A., Pakuła K., Bożek R., Rousset J., Ziółkowska D., Gołasa K., Korona K., Wysmołek A., Stępniewski R.
Acta Physica Polonica A
|
2016
|
vol. 129
|
issue 1a
A-129-A-131
EN
Boron nitride layers were grown on sapphire substrate by metal organic vapor phase epitaxy system that was originally designed for growth of GaN. Structures were characterized by scanning electron microscopy, atomic force microscopy, the Raman spectroscopy, absorption and time resolved photoluminescence. Presented results confirm successful deposition of BN layers and gives information about basic properties of the material. The Raman line at 1370 cm^{-1} and absorption edges at 5.6-5.9 eV were observed which is related to hexagonal phase.
14
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Self-Limiting Growth of GaN at Low Temperatures

51%
Ozgit C., Donmez I., Biyikli N.
Acta Physica Polonica A
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2011
|
vol. 120
|
issue 6A
A-55-A-57
EN
GaN thin films were deposited in a self-limiting fashion at low temperatures. Films were deposited on Si substrates by plasma-enhanced atomic layer deposition using trimethylgallium (TMG) or triethylgallium (TEG) as the group-III, and ammonia (NH_3) as the group-V precursors. TMG and TEG saturations were observed at 185 and 150°C, for doses starting from 0.015 and 1 s, respectively. Constant deposition rates of ≈ 0.51 and ≈ 0.48 Å/cycle were obtained within the temperature ranges of 250-350 and 150-350C for TMG- and TEG-based plasma-enhanced atomic layer deposition processes. Oxygen contents of the films were high ( ≈ 20 at.%) as determined by X-ray photoelectron spectroscopy.
15
Content available remote

Ellipsometric Evaluation of the Optical Constants of Zirconium Oxynitride Thin Films Deposited by Reactive Pulsed Magnetron Sputtering

51%
Tomsah I.
Acta Physica Polonica A
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2013
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vol. 124
|
issue 1
141-145
EN
Three different zirconium oxynitride films were deposited onto glass and Si (100) substrates at room temperature by pulsed reactive dc magnetron sputtering of a metallic Zr target in an Ar/O_2/N_2 atmosphere. The structural, compositional and optical properties of the deposited films were found to depend on the ratio of nitrogen partial pressure to the total reactive gas partial pressure. Energy-dispersive X-ray spectroscopy measurements revealed that as the nitrogen amount increased in the reactive gas the nitrogen content was found to increase in the film. The film structure was determined by X-ray diffraction. The X-ray diffraction patterns of the analyzed samples revealed a strong dependence of the ZrO_xN_{y} film structure on composition. A two layer model, the Bruggeman effective medium approximation and both Drude absorption edge and Lorentz oscillators were used to describe the surface roughness layer and the main ZnO_xN_{y} layer, respectively, was used to describe the experimental ellipsometric data. The optical band gap was decreased from 3.56 to 3.45 eV with changing nitrogen content, while refractive index at 650 nm simultaneously was increased from 1.98 to 2.11.
16
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Fabrication and Characterization of Thin Films of the Organic Superconductor α_{t}-(BEDT-TTF)_{2}I_{3}

51%
Moldenhauer J., Wachtel H., Schweitzer D., Gompf B., Eisenmenger W., Bele P., Brunner H., Keller H.
Acta Physica Polonica A
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1995
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vol. 87
|
issue 4-5
823-827
EN
α-(BEDT-TTF)_{2}I_{3} is a quasi-two-dimensional organic metal with a metal-insulator phase transition at 135 K. Thermal treatment at about 80°C leads to the metallic system α_{t}-(BEDT-TTF)_{2}I_{3}, which becomes supercon­ducting below 8 K. Thin films of the α-phase (thickness between 500 and 3000 Å) have been evaporated in high vacuum onto several substrates and characterized by means of X-ray diffraction, scanning electron microscopy, atomic force microscopy and low field microwave absorption. Depending on the temperature of the substrate and the evaporation rate, the films exhibit different degrees of microcrystallinity, which under certain conditions can be strongly reduced and a completely covering film can be obtained. X-ray diffraction spectra reveal a high orientation with the c-axis perpendicular to the substrate and as well the successful conversion into the α_{t}-phase by tem­pering. Scanning electron microscopy and atomic force microscopy investiga­tions prove that the conversion takes place without reducing the mechanical quality of the films. Low-field microwave-absorption experiments show that the α_{t}-films become superconducting with an onset at 9 K.
17
Publication available in full text mode
Content available

Spin-Polarized Carrier Injection in MOCVD-Grown YBCO/STO/LSMO Heterostructures with Underlying YBCO Layer

51%
Vengalis B., Plaušinaitiene V., Abrutis A., Šaltytė Z.
Acta Physica Polonica A
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2005
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vol. 107
|
issue 2
286-289
EN
The oxide heterostructures composed of superconducting YBa_2Cu_3O_7 bottom layer, the overlying ferromagnetic La_{1-x}Sr_xMnO_3 film and SrTiO_3 as ultrathin (d≈5 nm) barrier were grown heteroepitaxially onto LaAlO _3 substrates by applying pulsed liquid injection metalorganic chemical vapour deposition technique. We report anomalous interface resistance increase with cooling just below superconductive transition temperature (T_c≅85 K) and enhanced suppression of supercurrent of strip-like YBa_2Cu_3O_7 film due to spin-polarized carriers injected from the ferromagnetic manganite layer.
18
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The Metalorganic Vapour Phase Epitaxy Growth of A^{III}B^{V} Heterostructures Observed by Reflection Anisotropy Spectroscopy

51%
Zíková M., Hospodková A., Pangrác J., Vyskočil J., Hulicius E., Oswald J., Komninou P., Kioseoglou J.
Acta Physica Polonica A
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2016
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vol. 129
|
issue 1a
A-75-A-78
EN
Reflectance anisotropy spectroscopy is a useful technique used for in situ observation of the metalorganic vapour phase epitaxy growth, because it does not require vacuum in the reaction chamber. With this method we are able to observe the quantum dot growth, the incorporation of indium or antimony atoms in the layer or the monolayer growth of GaAs. We can also estimate the amount of InAs needed for the quantum dot formation, the time necessary for the quantum dot growth or reveal the unintended growth of InAs quantum dots from large dissolved InAs objects.
19
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Morphology and Optical Properties of Laser-Assisted Chemical Vapour Deposited GaN

51%
Goldys E., Godlewski M., Tansley T.
Acta Physica Polonica A
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1998
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vol. 94
|
issue 2
331-335
EN
Properties of GaN epilayers grown by laser-assisted chemical vapour deposition are discussed. Good crystallinity and surface morphology of the films is demonstrated. Micro-Raman spectra are explained by scattering by small, randomly oriented cubic phase units present in the GaN film.
20
Content available remote

Structure Dependent Conductivity of Ultrathin ZnO Films

51%
Snigurenko D., Kopalko K., Krajewski T., Łuka G., Gierałtowska S., Witkowski B., Godlewski M., Dybko K., Paszkowicz W., Guziewicz E.
Acta Physica Polonica A
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2012
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vol. 122
|
issue 6
1042-1044
EN
Zinc oxide films dedicated for hybrid organic/inorganic devices have been studied. The films were grown at low temperature (100°C, 130C and 200°C) required for deposition on thermally unstable organic substrates. ZnO layers were obtained in atomic layer deposition processes with very short purging times in order to shift a structure of the films from polycrystalline towards amorphous one. The correlation between atomic layer deposition growth parameters, a structural quality and electrical properties of ZnO films was determined.
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