Search results

1

Optical Response of La_{1-x}MnO_3/Al_2O_3 Films

100%

Babonas G., Reza A., Szymczak R., Baran M., Fröhlich K., Jasutis V., Diduszko R.

Acta Physica Polonica A

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2003

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vol. 103

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issue 1

77-83

EN

La_{1-x}MnO_3 films grown by metal organic chemical vapor deposition technique on r-plane cut Al_2O_3 substrates were investigated. The change of the optical response over the La_{1-x}MnO_3/Al_2O_3 sample surface was investigated along with the temperature dependence of magnetization. The mostly pronounced difference in the spectra of dielectric function occurred in the region of the d-d transitions of Mn-ions. The changes in the optical spectra and magnetic properties were correlated to the structural features of thin film.

2

Confocal Microscope Studies of MoS_{2} Layer Thickness

80%

Grzeszczyk M., Gołasa K., Piętka B., Babiński A., Szczytko J.

Acta Physica Polonica A

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2014

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vol. 126

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issue 5

1207-1208

EN

We have been studying micro-luminescence of various exfoliated MoS_{2} flakes using a confocal microscope. A crucial issue is to determine thickness of the investigated layer. The common way - using atomic force microscopy, electron microscopy or the Raman spectroscopy - requires moving the sample out from the confocal microscope experimental setup and looking for a particular exfoliated flake hidden among thousands of others. In order to preliminarily determine thickness of investigated layers we have performed a study on optical reflectivity and compared the results with the Raman spectroscopy investigations. In this way we were able to calibrate our experimental setup. Optical measurements are much faster than the Raman spectroscopy and can give a good estimation of MoS_{2} thickness.

3

Study of Terahertz Emission from Surfaces of Cu(InGa)Se_2 Layers

80%

Koroliov A., Arlauskas A., Balakauskas S., Šoliūnas M., Maneikis A., Krotkus A., Šetkus A., Tamošiūnas V.

Acta Physica Polonica A

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2013

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vol. 124

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issue 5

846-848

EN

In this contribution, we report on investigations of THz emission from Cu(In,Ga)Se_2 layers, deposited from a single copper-deficient sputtering target. Emission from Cu(In,Ga)Se_2 layer surface and from multilayer structure with transparent ZnO layers were studied. It was determined that additional undoped ZnO layer reduces the amplitude of THz emission, while additional n-type ZnO layers increase the emission amplitude again. This effect can be attributed to stronger electric field in the heterostructure between p-type Cu(In,Ga)Se_2 and n-type ZnO layers.

4

Optical and Structural Studies of Sol-Gel Deposited Nanostructured CdO Thin Films: Annealing Effect

80%

Abdolahzadeh Ziabari A., Ghodsi F.

Acta Physica Polonica A

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2011

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vol. 120

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issue 3

536-540

EN

Nanocrystalline CdO thin films were prepared by sol-gel dip-coating method using a different solution. The as-deposited films were subjected to drying temperature of 120° in air. The prepared films were annealed in different temperatures of 200, 300 and 400°C. The characterization of samples was carried out by X-ray diffraction, scanning electron microscopy and UV-VIS spectroscopy. Results show that the samples are polycrystalline in nature and the crystallinity of the films improves with temperature. The average grain size is in the range of 19-34 nm. It was observed that the optical parameters of the films were affected by annealing temperature.

5

Relative Reflection Difference as a Method for Measuring the Thickness of the Exfoliated MoSe₂ Layers

80%

Łempicka K., Norowski K., Grzeszczyk M., Król M., Lekenta K., Babiński A., Piętka B., Szczytko J.

Acta Physica Polonica A

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2017

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vol. 132

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issue 2

316-318

EN

We propose a method for measuring the thickness of the exfoliated MoSe₂ layers deposited on Si/SiO₂ substrate, based on the reflectance measurements performed with laser light illumination at two different wavelengths: red and green from confocal microscope at room temperature. We demonstrate the correlation between the number of layers in a flake and the value of its relative reflection difference. We applied the transfer matrix method to calculate the reflectivity and verify our experimental results. The approach proposed by us allows for fast and automatic verification of the exfoliated MoSe₂ layers thickness on large areas of the substrate.

6

Structural and Optoelectronic Properties of In-Zn-S sprayed Layers

80%

Lazzez S., Boubaker K., Ben Nasrallah T., Amlouk M., Belgacem S., Mnari M., Chtourou R.

Acta Physica Polonica A

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2008

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vol. 114

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issue 4

869-880

EN

In this work, In-Zn-S thin layers were prepared using the spray pyrolysis technique on glass substrates at 320°C. The molar ratio between zinc and indium x=[Zn^{2+}]/[In^{3+}] was varied in 0-0.4 domain whereas [S^{2-}]/[In^{3+}] one was taken constant equal to 2. The atomic composition was carried out with the atomic absorption. The structural study of all layers via X-ray diffraction and atomic force microscopy shows that the layer, obtained using x=0 is formed by binary material In_2S_3 with a principal orientation along (400). When the composition increases the same study depicts the presence of other materials such as ZnO, ZnS, and ZnIn_2S_4. On the contrary, for x=0.4, the film is mainly formed by the ternary compound ZnIn_2S_4 which crystallizes in cubic phase. Moreover, the optical analysis via the transmittance, reflectance as well as the photocurrent reveals that the band gap energy E_g increases slightly as a function of the x composition (E_g varies from 2.6 to 2.9 eV).

Refine search results

Optical Response of La_{1-x}MnO_3/Al_2O_3 Films

Confocal Microscope Studies of MoS_{2} Layer Thickness

Study of Terahertz Emission from Surfaces of Cu(InGa)Se_2 Layers

Optical and Structural Studies of Sol-Gel Deposited Nanostructured CdO Thin Films: Annealing Effect

Relative Reflection Difference as a Method for Measuring the Thickness of the Exfoliated MoSe₂ Layers

Structural and Optoelectronic Properties of In-Zn-S sprayed Layers