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1
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Spin Torque in Semiconductor Single Planar Tunnel Junctions

100%
Wilczyński M., Barnaś J., Świrkowicz R.
Acta Physica Polonica A
|
2008
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vol. 113
|
issue 1
35-38
EN
Transport in a single planar tunnel junction with electrodes made of a ferromagnetic semiconductor is analyzed theoretically in the zero- -temperature limit. Tunneling current and both (in-plane and out-of-plane) components of the spin torque exerted on one of the ferromagnetic electrodes are determined as a function of the angle\thet a between magnetic moments of the electrodes. The influence of the bias voltage and spin splitting of the electron band (in both electrodes) on the spin torque components is analyzed numerically.
2
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The Seebeck Effect in Double Tunnel Junctions with Ferromagnetic Electrodes and Central Layer Separated by Nonmagnetic Barriers

80%
Wilczyński M.
Acta Physica Polonica A
|
2018
|
vol. 133
|
issue 3
544-547
EN
The Seebeck effect is analysed in the double planar tunnel junctions consisting of ferromagnetic electrodes and the central layer separated by nonmagnetic barriers with the arbitrary angle between magnetic moments in neighbouring ferromagnetic layers. The Seebeck coefficient is calculated as a function of the thickness of the central layer. The influence of temperature of the junction and the relative orientation of magnetic moments in ferromagnetic layers on this coefficient is also analysed. Calculations are performed in the linear response theory using the free-electron model. It has been found that the Seebeck coefficient oscillates with the thickness of the central layer and can be strongly enhanced in the junction with special central layer thickness due to electron tunnelling by resonant states. The form of the observed oscillations depends on the temperature of the junction. The magnitude of the Seebeck coefficient usually increases with the increase of the angle between magnetic moments in the neighbouring ferromagnetic layers as in the case of single junctions. However, in the junctions with the specially designated central layer the decrease of the magnitude of the Seebeck coefficient with the increase of this angle can be observed.
3
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Analytical Threshold Voltage Model Considering Quantum Size Effects for Nanocrystalline Silicon Thin Film Transistors

80%
Remmouche R., Fates R., Bouridah H.
Acta Physica Polonica A
|
2017
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vol. 132
|
issue 4
1230-1233
EN
This paper presents an analytical model calculating the threshold voltage in nanocrystalline silicon (nc-Si) thin film transistors by considering a granular morphology of silicon nanocrystallites forming the channel and using the two-dimensional the Poisson equation. The numerical calculations demonstrate that, according to the quantum size effects on both dielectric constant and band gap, the threshold voltage values are strongly related to the silicon crystallites structure. To justify the validity of our model suitable for implementation in circuit simulators such as SPICE, the simulation results obtained are compared with the available research data and they shows a satisfactory match, thus, demonstrating the validity of our model.
4
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Electronic Properties of Structures Containing Films of Alq₃ and LiBr Deposited on Si(111) Crystal

80%
Sito J., Grodzicki M., Lament K., Wasielewski R., Mazur P., Ciszewski A.
Acta Physica Polonica A
|
2017
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vol. 132
|
issue 2
357-360
EN
The electronic structures of Alq₃/Si(111) and Alq₃/LiBr/Si(111) interfaces are presented in this report. The studies were carried out in situ in ultrahigh vacuum by ultraviolet photoelectron spectroscopy. Alq₃ and LiBr layers were vapour deposited onto a single crystal of n-type Si(111). The energy level diagrams were prepared for the structures. The formation of the LiBr interfacial layer results in a decrease of the energy barrier at the interface.
5
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Modification of MIS Devices by Irradiation and High-Field Electron Injection Treatments

61%
Andreev D., Bondarenko G., Andreev V., Maslovsky V., Stolyarov A.
Acta Physica Polonica A
|
2017
|
vol. 132
|
issue 2
245-248
EN
Methods to modify gate dielectrics of MIS structures by irradiation treatments and high-field electron injection into dielectric are considered. In addition, distinctive features of these methods used to correct parameters of MIS devices are studied. It was found out that negative charge, accumulating in the thin film of phosphosilicate glass (PSG) of the MIS structure having a two-layer gate dielectric SiO_2-PSG under the high-field injection or during the irradiation treatment can be used to correct the threshold voltage to improve the charge stability and raise the voltage of breakdown for the MIS devices. It is proved that the density of electron traps rises with the increasing thickness of the PSG film. In this paper a method to modify electrophysical characteristics of MIS structures by the high-field tunnel injection of electrons into the gate dielectric under the mode of controlled current stress is proposed. The method allows to monitor changing of MIS structure parameters directly during the modification process.
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