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1
Content available remote

The Temperature Dependence of the Three-Dimensional Analogue of the Quantum Hall Effect in Semimagnetic Hg_{1-x}Fe_{x}Se

100%
Laue I., Portugall O., Von Ortenberg M.
Acta Physica Polonica A
|
1991
|
vol. 79
|
issue 2-3
359-362
EN
Due to the pinning of the Fermi energy to a localised donor state in Hg_{1-x}Fe_{x}Se the free carrier concentration oscillates in an applied external magnetic field. We measured the resulting modulations of the Hall resistance in fields up to 17.5 T and at temperatures between 4.2 K and 30 K.
2
Content available remote

Magnetotransport Characterization of HgCdTe Solid Solutions Structural Quality

100%
Berchenko N. N., Kurbanov K. R., Nikiforov A. y.
Acta Physica Polonica A
|
1995
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vol. 88
|
issue 4
679-682
EN
It has been demonstrated that variable-magnetic-field Hall measure­ments for n-Hg_{1-x}Cd_{x}Te samples in the extrinsic and intrinsic conductivity regions permit to identify and to evaluate semiqualitatively electrical activity of extended defects in this material.
3
Content available remote

A New Type of Semi-Insulating Materials

100%
Leon R., Weber E.
Acta Physica Polonica A
|
1992
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vol. 82
|
issue 4
664-669
EN
The introduction of Cu in InP at 700°C and higher temperatures results in both initially p-type and n-type InP become semi-insulating. It is also observed that thermally stable In-Cu rich precipitates form, that the concentration of deep levels is negligible and that InP:Cu samples exhibit inhomogeneities and anomalous transport behavior. The buried Schottky barrier model is the only model thus far studied which is consistent with these experimental observations. This model has general applicability, and its possible relevance to other semiconductors is examined. The conditions necessary for forming quasi-intrinsic semiconductors by metallic precipitation are discussed.
4
Content available remote

Hydrostatic Pressure Studies of Asymmetric Double-Barrier Resonant Tunneling Diodes

63%
Diniz R., Smoliner J., Gornik E., Suski T., Meiners U., Brugger H.
Acta Physica Polonica A
|
1993
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vol. 84
|
issue 4
625-628
EN
Tunneling processes in double-barrier GaAs/AlAs diodes with an incorporated AlGaAs pre-barrier were studied under hydrostatic pressure. The electrical characteristics resulting from a pre-barrier on the side of the emitter can be explained at 1 bar, solely by the Γ-profile: increasing pressure shows that the pre-barrier does not reduce the Γ-X tunneling. A pre-barrier on the collector side leads to charge buildup at the X minimum within the AlAs collector barrier.
5
Content available remote

High Temperature Stability of Electrical and Optical Properties of Bulk GaN:Mg Grown by HNPS Method in Different Crystallographic Directions

63%
Sadovyi B., Amilusik M., Staszczak G., Bockowski M., Grzegory I., Porowski S., Konczewicz L., Tsybulskyi V., Panasyuk M., Rudyk V., Karbovnyk I., Kapustianyk V., Litwin-Staszewska E., Piotrzkowski R.
Acta Physica Polonica A
|
2016
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vol. 129
|
issue 1a
A-126-A-128
EN
Single crystals of Mg-doped GaN grown by high nitrogen pressure solution method in different crystallographic directions ([0001], [101̅1], and [101̅1̅]) were investigated in order to determine thermal stability of their electrical and optical properties. Obtained dependences of resistivity, the Hall coefficient and energy shift of Mg-related photoluminescence peak on annealing temperature allow to suggest that incorporation of Mg in GaN is significantly influenced by the direction of the crystallization front.
6
Content available remote

Te Shallow Donor Solubility Mechanism in GaAs

63%
Słupiński T., Zielińska-Rohozińska E., Harasimowicz T.
Acta Physica Polonica A
|
1996
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vol. 90
|
issue 5
1080-1084
EN
Results of thermal annealing of extremely highly doped GaAs:Te on room temperature Hall electron concentration and diffuse X-ray scattering are briefly reported. Reversible decrease/increase in electron concentration vs. temperature of annealing perfectly coincides with a strong increase/decrease in diffuse X-ray scattering intensity. An analysis of X-ray results indicates an arising of correlations in impurity positions in crystal lattice points in GaAs:Te solid solution for very high doping level. We give a sketch of a new formal model of tight bond creation between impurity atoms, which can consistently describe our results. The model is free from difficulties in describing annealing results encountered by a widely spread model of charge compensation by native acceptors.
7
Content available remote

Anisotropy of Magnetic Interactions in HgFeSe

63%
Wilamowski Z., Przybylińska H., Joss W., Guillot M.
Acta Physica Polonica A
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1992
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vol. 82
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issue 4
689-692
EN
Magnetic properties (susceptibility, high-field torque and magnetization) of cubic HgFeSe are analyzed. Van Vleck magnetism of Fe^{2+} is well evidenced. The energy splitting of the Fe levels in HgSe is shown to differ considerably from that in other II-VI compounds.
8
Content available remote

Hopping Conductivity in (Zn,Fe)Se Intentionally Doped with Ag

63%
Zaręba A., Demianiuk M.
Acta Physica Polonica A
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1992
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vol. 82
|
issue 5
749-752
EN
The transport phenomena in (Zn,Fe)Se were studied. In order to obtain iron centers in Fe^{3+} charge state the crystals were doped by Ag what produces acceptors compensating Fe^{2+} donors. The results are explained in terms of thermally activated jumping of charges between Fe^{3+} and Fe^{2+} centers. The nature of activation energy is discussed. The polaron model seems to be not valid in our case. The Coulomb interaction between charged acceptors and "holes" on iron centers is considered as the origin of thermal activation of jumps. We suggest the deviation from random and mutually independent distributions of charged Ag acceptors and Fe^{3+} ions resulting from the electrostatic interactions between them at high temperatures.
9
Content available remote

Mercury Zinc Telluride 10.6 µm Ambient Temperature Photodetectors

63%
Piotrowski J.
|
EN
Theoretical and experimental investigations of mercury zinc telluride (MZT) ambient temperature longwavelength photodetectors are reported. The ultimate detectivities of MZT photoconductors (PC), photodiodes, photoelectromagnetic (PEM) and Dember detectors at 10.6 μm have been calculated as a function of material composition, doping and geometry of the devices. The high-temperature longwavelength PC and PEM detectors have been fabricated from Cu-doped bulk MZT crystals grown by a modified quench/anneal technique. The measured performance has been confronted with theoretical predictions showing good overall agreement. It is concluded that the high figure of merit, stability and hardness of MZT make this material superior in comparison to mercury cadmium telluride and that it will replace the latter in application for high-temperature photodetectors. The performance of high-temperature MZT photodetectors can be further improved by the use of optical resonant cavity and optical immersion. These devices exhibit detectivity by several orders of magnitude higher than thermal detectors with subnanosecond response time, and can achieve performance comparable to that of slow thermal detectors.
10
Content available remote

Deep Level Studies in Zn_{1-x}Mg_{x}Se Layers Grown by MBE

63%
Płachetko S., Ząbik G., Łukasiak Z., Borowski P., Bała W.
|
EN
The deep levels present in semiconducting Zn_{1-x}Mg_{x}Se (0 ≤ x ≤ 0.4) were investigated by means of deep level transient spectroscopy, photocapacitance transient and thermally stimulated depolarization. The thermal activation energy levels estimated from the deep level transient spectroscopy measurements are: E_{T1}=0.28 eV and E_{T2}=0.56 eV. For the Zn_{1-x}Mg_{x}Se epilayers thermally stimulated depolarization curves consist of four overlapping peaks: 227.4 K, 243.6 K, 265.7 K, and 285.0 K.
11
Content available remote

FFirst TSC and DLTS Measurements of Low Temperature GaAs

63%
Muszalski J., Babiński A., Korona K., Kamińska E., Piotrowska A., Kamińska M., Weber E.
|
EN
The first thermally stimulated current (TSC) and deep level transient spectroscopy (DLTS) studies performed on GaAs grown by molecular beam epitaxy (MBE) at low substrate temperatures (LT GaAs) are reported. TSC experiments, conducted on as grown and 400-580°C annealed layers showed domination of arsenic antisite (EL2-like) defect and supported its key role in hopping conductivity. DLTS studies, performed on Si doped and annealed at 800°C layers revealed substantially lower concentration of EL2-like defect and an electron trap of activation energy ΔE = 0.38 eV was found.
12
Content available remote

Deep Defects in Low-Temperature GaAs

63%
Korona K., Muszalski J., Kamińska M., Weber E.
Acta Physica Polonica A
|
1992
|
vol. 82
|
issue 5
821-824
EN
Conductivity of GaAs layers grown by molecular beam epitaxy at low substrate temperature (190-200°C) and then annealed at few different temperatures (between 300 and 600°C) were studied. It was confirmed that electron transport is due to hopping between arsenic antisite defects. Parameters describing hopping conductivity and their dependence on temperature of annealing are discussed. Other deep defects with activation energies of 0.105, 0.30, 0.31, 0.47, 0.55 eV were found using photoinduced current transient spectroscopy measurements.
13
Content available remote

Model of Hopping between Deep Centers in Low Temperature GaAs

63%
Korona K., Kamińska M., Baranowski J.
Acta Physica Polonica A
|
1995
|
vol. 87
|
issue 2
337-340
EN
A model explaining hopping conductivity via EL2 deep centers in low temperature GaAs is presented. It is proposed that the wave function of the EL2 center consists of a localized part and of an external one. The model can describe such features as large wave function radius of hopping centers, changes of the conductivity during transition of EL2 to the metastable state and a high potential fluctuation amplitude.
14
Content available remote

High Resistivity GaN Single Crystalline Substrates

63%
Porowski S., Boćkowski M., Łucznik B., Grzegory I., Wróblewski M., Teisseyre H., Leszczyński M., Litwin-Staszewska E., Suski T., Trautman P., Pakuła K., Baranowski J.
Acta Physica Polonica A
|
1997
|
vol. 92
|
issue 5
958-962
EN
High resistivity 10^{4}-10^{6} Ω cm (300 K) GaN single crystals were obtained by solution growth under high N_{2} pressure from melted Ga with 0.1-0.5at.% of Mg. Properties of these crystals are compared with properties of conductive crystals grown by a similar method from pure Ga melt. In particular, it is shown that Mg-doped GaN crystals have better structural quality in terms of FWHM of X-ray rocking curve and low angle boundaries. Temperature dependence of electrical resistivity suggests hopping mechanism of conductivity. It is also shown that strain free GaN homoepitaxial layers can be grown on the Mg-doped GaN substrates.
15
Content available remote

Carrier Collection into InGaAs/GaAs Quantum Well: Role of Surface Band Bending

63%
Ambrazevičius G., Marcinkevičius S., Lideikis T., Naudžius K.
Acta Physica Polonica A
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1992
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vol. 82
|
issue 4
660-663
EN
Photoluminescence and photoluminescence excitation spectra of InGaAs/GaAs quantum wells located at different distances from a surface have been studied at 2 K. The influence of surface band bending on carrier transfer into a quantum well is demonstrated. Oscillations due to relaxation of photo-excited carriers in GaAs barrier have been observed in the quantum well photoluminescence excitation spectra.
16
Content available remote

Electrical and ESR Studies of GaN Layers Grown by Metal Organic Chemical Vapour Deposition

63%
Suchanek B., Palczewska M., Pakuła K., Baranowski J., Kamińska M.
Acta Physica Polonica A
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1997
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vol. 92
|
issue 5
1001-1004
EN
Electrical transport and ESR studies were performed on the state-of-theart GaN layers grown on sapphire substrate using metal organic chemical vapour deposition technique. For undoped samples electron concentration below 2×10^{17} cm^{-1} and mobility up to 500 cm^{2}/(V s) were achieved whereas hole concentration up to 7×10^{17} cm^{-3} and mobility about 16 cm^{2}/(V s) were obtained for intentionally Mg doped samples and subsequently annealed. Temperature dependence of mobility was discussed. ESR revealed the presence of two resonance absorption lines. One of them with g_{⊥}=1.9487 and g_{∥}=1.9515, commonly observed in n-type GaN was due to shallow donor. The second ESR line was an isotropic one of g=2.0032 and it is discussed.
17
Content available remote

Magnetoresistance of n-CdTe in the "Persistent" State

63%
Kossacki P., Karpierz K.
Acta Physica Polonica A
|
1993
|
vol. 84
|
issue 4
737-740
EN
In this paper we present results of measurements done on photoexcited carriers in high purity n-CdTe at liquid helium temperature. The photocurrent under near band gap illumination was measured, as well as the long term (≈ 15 hours) photoconductive decay after switching off the light. The transverse magnetoresistance was measured in high magnetic fields in two cases: 1) under external illumination, 2) in the "persistent" state after ≈ 15 h of photocurrent decay. It was shown that in high magnetic fields this magnetoresistance exhibits a quadratic dependence on magnetic field (Δρ/ρ ≈ B^{2}) in both cases.
18
Content available remote

Electrical Properties of Au/n-GaAs_{1-x}Sb_{x} Contacts

63%
Szatkowski J., Kasprzak J. F., Płaczek-Popko E., Radojewska E. B.
Acta Physica Polonica A
|
1991
|
vol. 79
|
issue 2-3
179-182
EN
The Schottky barrier heights of Au on n-type GaAs_{1-x}Sb_{x} were measured with I-V, C-V, and photoresponse (PR) techniques. The barrier height was determined to be 0.65, 0.75 and 0.7 eV, respectively.
19
Content available remote

Electrical Characteristics of Metal/p-type CdTe Schottky Contacts

63%
Szatkowski J., Sierański K., Kasprzak J.
Acta Physica Polonica A
|
1991
|
vol. 79
|
issue 2-3
175-178
EN
The Schottky barrier height of Al, Mg and Ag on chemically prepared p-type surface were measured with I-V techniques. The barrier heights were found to be independent of metal used, and equal to 0.73 ± 0.02 eV.
20
Content available remote

35×4 Substates of DX Centers in AlGaAs:Si

63%
Ostermayer G., Brunthaler G., Stöger G., Jantsch W., Wilamowski Z.
Acta Physica Polonica A
|
1993
|
vol. 84
|
issue 4
765-768
EN
The measured temperature dependent free carrier concentration in AlGaAs:Si samples is compared with a model calculation where we take the full 35 × 4 alloy statistics of the DX center and potential fluctuations into account. Within this statistics we are able to describe the electron capture by a single barrier E_{B} for all Al-configurations. We compare the alloy statistics with the simple 4 × 1 statistics.
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