Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl
Preferences help
enabled [disable] Abstract
Number of results

Results found: 2

Number of results on page
first rewind previous Page / 1 next fast forward last

Search results

help Sort By:

help Limit search:
first rewind previous Page / 1 next fast forward last
EN
Trap generation in amorphous SiO_{2} films with thickness about 500 Å was studied by nonavalanche injection of hot electrons. The trap density, the electron capture cross-section of native and generated traps and the effective trap generation constant for the oxide fields of 1-4 MV/cm, injected charge density up to 3 × 10^{19} e/cm^{-2} and injected current density in the range 2-300 μA/cm^{2} were determined and discussed.
first rewind previous Page / 1 next fast forward last
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.