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Magnetotransport through Nanoconstriction in Ferromagnetic Semiconductor (Ga,Mn)As

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Figielski T., Wosiński T., Pelya O., Sadowski J., Morawski A., Mąkosa A., Dobrowolski W., Jagielski J., Wróbel J.
Acta Physica Polonica A
|
2003
|
vol. 103
|
issue 6
525-531
EN
We studied narrow (submicron) constrictions in the layers of ferromagnetic semiconductor (Ga,Mn)As. We have demonstrated a contribution of the quantum localization effects to the magnetoresistance of the constricted samples. We have also found a negative contribution of a domain wall trapped in the constriction to the resistance, due presumably to the erasing of the localization effects by the domain wall.
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