Search results

Sort By:

Limit search:

Submillimeter-Wave Oscillations in Recessed InGaAs/InAlAs Heterostructures: Origin and Tunability

100%

Pérez S., Mateos J., González T.

Acta Physica Polonica A

2011

vol. 119

issue 2

111-113

By means of an ensemble Monte Carlo simulator, the appeareance of THz oscillations in InAlAs/InGaAs slot diodes is predicted when the applied bias exceeds the threshold for intervalley transfer. Such high frequency is attained by the presence of a Gunn-like effect in the recess-to-drain region of the device channel whose dynamics is controlled by ballistic Γp valley electrons. In this work we explain the mechanism at the origin of this effect and also the influence of the bias conditions, δ-doping, recess-to-drain distance and recess length on the frequency of the ultrafast Gunn-like oscillations. The simulations show that a minimum value for the δ-doping is necessary to have enough carrier concentration under the recess and allow the oscillations to emerge. Finally, we show that shortening the devices (small recess and recess-to-drain lengths) increases the oscillation frequency, so provides an interesting frequency tunability of this THz source.

Theoretical Investigation of Large-Signal Noise in Nanometric Schottky-Barrier Diodes Operating in External Resonant Circuits

64%

Shiktorov P., Starikov E., Gružinskis V., Varani L., Vaissière J., Reggiani L., Pérez S., González T.

Acta Physica Polonica A

2005

vol. 107

issue 2

396-399

We report Monte Carlo simulations of electronic noise in heavily doped nanometric GaAs Schottky-barrier diodes operating in series with a parallel resonant circuit when a high-frequency large-signal voltage is applied to the whole system. Significant modifications of the noise spectrum with respect to the unloaded diode are found to occur in the THz-region.

Refine search results

2 Acta Physica Polonica A

1 2011

1 2005

2 González T.

2 Pérez S.

1 Gružinskis V.

1 Mateos J.

1 Reggiani L.

1 Shiktorov P.

1 Starikov E.

1 Vaissière J.

1 Varani L.

Search results

Submillimeter-Wave Oscillations in Recessed InGaAs/InAlAs Heterostructures: Origin and Tunability

Theoretical Investigation of Large-Signal Noise in Nanometric Schottky-Barrier Diodes Operating in External Resonant Circuits