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Nonlinear Diffusion in Excited HgCdTe and Si Crystals

100%
Janavičius A., Norgėla Ž., Purlys R.
Acta Physica Polonica A
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2003
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vol. 104
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issue 5
459-467
EN
We discuss the properties of the nonlinear diffusion equation for the case of diffusion in excited systems. The diffusion coefficient is directly proportional to the concentration of impurities and depends on time in a special way. For the description of the excited systems, we used a special temperature function, which defined the time dependent diffusion coefficient and the Boltzmann distribution of the excited vacancies or impurity atoms in solids. This model was used for the approximation of indium concentration profiles in HgCdTe of a rapid diffusion component and very fast diffusion of metastable vacancies irradiated by soft X-rays in an excited Si crystal.
2
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Investigation of Compound Relaxation Processes in Crystal Lattice Dynamics of Si Irradiated by Soft X-rays

100%
Janavičius A., Purlys R., Norgėla Ž.
Acta Physica Polonica A
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2006
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vol. 109
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issue 2
159-170
EN
We applied soft X-rays for investigation of dynamics of Frenkel point defects in a Si crystal during its saturation with metastable vacancies with neighboring Si atoms in excited states or vacancies with neighboring Si atoms in interstitial states produced in the lattice after ejection of Auger electrons. The irradiated irregularities and defects of the lattice cause a change of Bragg reflection maxima. Several resonance phenomena related to the metastable states introduced into Si crystal by soft X-rays irradiation have been detected.
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Crystal Lattice and Carriers Hall Mobility Relaxation Processes in Si Crystal Irradiated by Soft X-rays

76%
Janavičius A., Storasta J., Purlys R., Mekys A., Balakauskas S., Norgėla Ž.
Acta Physica Polonica A
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2007
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vol. 112
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issue 1
55-68
EN
We applied soft X-rays for investigation of dynamics of the Frenkel point defects in a Si crystal during its saturation with metastable vacancies with neighboring Si atoms in excited states produced in the lattice after ejection of the Auger electrons. The irradiated irregularities and defects of the lattice cause a change of the Bragg reflection maxima. Several resonance phenomena are related to metastable states introduced into Si crystal by soft X-rays irradiation. The resonance of mean square displacements of Si atoms in the lattice and the resonance of the Hall mobility after irradiation are obtained and considered.
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