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1
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Optical Analyses of Si and GaAs Semiconductors by Fractional-Derivative-Spectrum Methods

100%
Rzodkiewicz W., Kulik M., Papis E., Szerling A.
Acta Physica Polonica A
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2009
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vol. 116
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issue S
S-95-S-98
EN
Optical spectra analysis provides a wealth of information on physical properties of various semiconductor materials. Fractional derivative spectrum technique is especially interesting when the limitations of the standard treatment occur. In this paper we present the fractional derivative spectrum method for analysis of the optical spectra for both Si and GaAs. The significant changes in critical point parameters in each treated Si and GaAs samples in comparison to that before treatment have been observed. Our investigation illustrates that fractional derivative spectrum is a very good technique to extract basic information on relevant physical quantities from the observed optical spectra, and it has the advantages of flexibility, directness, and sensitivity, which give possibility to obtain the Van Hove singularities (critical point parameters) efficiently with one consent.
2
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Nuclear and Optical Analyses of MOS Devices

100%
Rzodkiewicz W., Kulik M., Panas A., Kobzev A.
Acta Physica Polonica A
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2013
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vol. 123
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issue 5
851-853
EN
The characteristic dome-like shape distribution of electric parameters (with the biggest values in the middle and the lowest values in the corners of the gate) has been observed in our investigations. Taking the results of the papers into account, the following hypothesis was drawn: the shape distribution of electrical parameters has been caused by the irregular shape of stress distribution under the metal gate. To prove or deny the assumed hypothesis, a lot of investigations on stress and strain in MOS structures are being performed. The study of the atomic composition of electronic components constitutes the starting point of their characterization. Therefore, in this paper, we present experimental results of hydrogen, oxygen, aluminum, silicon, and copper concentrations in MOS structures carried out by the Rutherford backscattering spectrometry and elastic recoil detection methods. These techniques allow inter alia determination of silicon and oxygen content as a function of the position x on a wafer. On the basis of depth profile elastic recoil detection measurements performed on Al and AlSiCu gates, a much larger hydrogen content in the surface layer for MOS structure with Al gate was confirmed. Copper atoms were detected only in the AlSiCu gate.
3
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Effect of Thermal Annealing on Optical Properties of Implanted Gaas

100%
Kulik M., Komarov F., Mączka D.
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vol. 96
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issue 1
131-135
EN
GaAs samples doped with indium atoms by ion implantation and thermal annealed were studied using a channelling method, Rutherford backscattering, and an ellipsometry. From these measurements it was observed that the layer implanted with 3×10^{16} cm^{-2} indium dose was totally damaged and its optical properties, namely a refraction index n and an extinction coefficient k, corresponded to the amorphous material. Subsequent isobaric heating of the implanted samples resulted in recovery of the crystalline structures with simultaneous change of the n and k index values.
4
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The Influence of Ion Implantation on the Optical Parameters - Refraction and Extinction Coefficients οf the Oxygen-Enriched Layers Covering GaAs Implanted with Indium Ions

100%
Rzodkiewicz W., Kulik M., Pyszniak K., Kobzev A.
Acta Physica Polonica A
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2009
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vol. 116
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issue S
S-129-S-132
EN
The semi-isolating GaAs (100) samples irradiated with fluence 3 × 10^{15} ions/cm^{2} of In^{+} ions were characterized by using the methods: Rutherford backscattering spectroscopy, nuclear reaction analysis and ellipsometric spectroscopy. The values of the thicknesses layers enriched with oxygen and the implanted were determined by the methods of nuclear reaction analysis and Rutherford backscattering spectroscopy. Multilayer models were applied for determination of the optical constants (refraction and extinctions coefficients) of investigated samples. The thickness of native oxide covering the surface of implanted GaAs and refraction coefficients were increased after implantation with indium. The spectrum of extinction indexes as a function of light wavelength has two bands near the light wavelengths 400 nm and 480 nm. The observed effects can be interpreted as formation of local oxides of In and InAs precipitates or ternary alloys in enriched with oxygen layers at the surfaces of implanted GaAs.
5
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Dielectric Function of Native Oxide on Ion-Implanted GaAs

100%
Kulik M., Rzodkiewicz W., Gluba Ł., Kobzev A.
Acta Physica Polonica A
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2013
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vol. 123
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issue 5
956-959
EN
The main aim of the reported investigations is the influence of ion implantation on formation of native oxide layers and their optical spectra. Silicon implanted (100)-oriented GaAs crystalline wafers were used as substrates. The samples have been implanted with Ne^{+}, Al^{+}, Ar^{+}, or In^{+} ions at energies of 100, 120, 150, and 250 keV, respectively. The implantations were carried out at a fluence of 1 × 10^{16} cm^{-2} at 300 K. The refraction index spectral dependence for native oxide was approximated using the Cauchy equations. The dielectric function spectra of the native oxide layers on GaAs implanted with different ions have been obtained by variable angle spectroscopic ellipsometer in the 250-900 nm range using complementary information from the Rutherford backscattering/nuclear reactions measurements. The investigations showed that both real and imaginary parts of the dielectric function increase with mass of the ion species used for implantation.
6
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Chemical Composition of Native Oxide Layers on In^{+} Implanted and Thermally Annealed GaAs

88%
Kulik M., Kołodyńska D., Żuk J., Komarov F., Filiks J.
Acta Physica Polonica A
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2013
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vol. 123
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issue 5
943-947
EN
Semi-insulating GaAs wafers have been implanted with 250 keV In^{+} ions at a fluence of 3 × 10^{16} cm^{-2}. The samples prepared in this way were subsequently annealed at a temperature of 600°C or 800°C for 2 h. Thicknesses of the native oxide layers on implanted GaAs after samples storage in air were evaluated using the Rutherford backscattering spectrometry with the nuclear reaction O^{16}(α,α)O^{16} method. The chemical composition of native oxide layers on In^{+} implanted and annealed GaAs has been studied using X-ray photoelectron spectroscopy. As_{2}O_{3}, As_{2}O_{5}, Ga_{2}O_{3}, GaAs, InAs and InAsO_4 compounds were detected in these layers.
7
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Effect of N₂⁺ Ion Implantation and Thermal Annealing on Near-Surface Layers of Implanted GaAs

88%
Kulik M., Surowiec Z., Rzodkiewicz W., Filiks J., Drozdziel A.
Acta Physica Polonica A
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2015
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vol. 128
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issue 5
918-922
EN
The surface of semi-isolating GaAs (100) was irradiated with a fluence of 6×10¹⁷ cm¯² of the N₂⁺ ion beam; then, the samples were thermally annealed at temperatures of 500, 700, and 900°C for 2 h in an argon gas flow. The surface roughness of implanted samples was investigated with the help of atomic force microscopy. Numerous hillocks, which caused a significant increase in surface roughness, were observed. The spectroscopic ellipsometry method was used for determination of pseudo-dielectric functions of the near-surface layers in the investigated samples and the thickness of native oxides covering the irradiated surface. It was observed that the shapes of disorder spectra of the dielectric functions of near-surface layers of implanted GaAs partly returned to their original state after the thermal annealing.
8
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Nanocrystal- and Dislocation-Related Luminescence in~Si Matrix with InAs Nanocrystals

76%
Komarov F., Vlasukova L., Milchanin O., Mudryi A., Zuk J., Pyszniak K., Kulik M.
Acta Physica Polonica A
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2011
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vol. 120
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issue 1
204-207
EN
We have studied the influence of ion implantation and post-implantation annealing regimes on the structural and optical properties of silicon matrix with ion-beam synthesized InAs nanocrystals. (100) Si wafers were implanted at 25 and 500°C, subsequently with high fluences of As and In ions. After implantation the samples were processed by furnace and rapid thermal annealing at 900, 950 and 1050°C. A part of the samples implanted at 25°C was additionally exposed to H_2^{+} ions (100 keV, 1.2 × 10^{16} cm^{-2} in terms of atomic hydrogen). This procedure was performed to obtain an internal getter. In order to characterize the implanted samples transmission electron microscopy and low-temperature photoluminescence techniques were employed. It was demonstrated that by introducing getter, varying the ion implantation temperature, ion fluences and post-implantation annealing duration, and temperature it is possible to form InAs nanocrystals in the range of sizes of 2-80 nm and create various concentration and distribution of different types of secondary defects. The last ones cause in turn the appearance in photoluminescence spectra dislocation-related D1, D2 and D4 lines at 0.807, 0.870 and 0.997 eV, respectively.
9
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Composition and Structure of Czochralski Silicon Implanted with H_{2}^{+} and Annealed under Enhanced Hydrostatic Pressure

76%
Kulik M., Kobzev A., Misiuk A., Wierzchowski W., Wieteska K., Bak-Misiuk J.
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issue 2
332-335
EN
Depth distribution of implanted species and microstructure of oxygen-containing Czochralski grown silicon (Cz-Si) implanted with light ions (such as H^{+}) are strongly influenced by hydrostatic pressure applied during the post-implantation treatment. Composition and structure of Si:H prepared by implantation of Cz-Si with H_{2}^{+}; fluence D = 1.7 × 10^{17} cm^{-2}, energy E = 50 keV (projected range of H_{2}^{+}, R_{p}(H) = 275 nm), processed at up to 923 K under Ar pressure up to 1.2 GPa for up to 10 h, were investigated by elastic recoil detection Rutherford backscattering methods and the depths distributions of implanted hydrogen and also carbon, oxygen and silicon in the near surface were determined for all samples. The defect structure of Si:H was also investigated by synchrotron diffraction topography at HASYLAB (Germany). High sensitivity to strain associated with small inclusions and dislocation loops was provided by monochromatic (λ = 0.1115 nm) beam topography. High resolution X-ray diffraction was also used.
10
Content available remote

Influence of Hot Implantation on Residual Radiation Damage in Silicon Carbide

64%
Rawski M., Żuk J., Kulik M., Droździel A., Lin L., Prucnal S., Pyszniak K., Turek M.
Acta Physica Polonica A
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2011
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vol. 120
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issue 1
192-195
EN
Remarkable thermomechanical and electrical properties of silicon carbide (SiC) make this material very attractive for high-temperature, high-power, and high-frequency applications. Because of very low values of diffusion coefficient of most impurities in SiC, ion implantation is the best method to selectively introduce dopants over well-defined depths in SiC. Aluminium is commonly used for creating p-type regions in SiC. However, post-implantation radiation damage, which strongly deteriorates required electric properties of the implanted layers, is difficult to anneal even at high temperatures because of remaining residual damage. Therefore implantation at elevated target temperatures (hot implantation) is nowadays an accepted method to decrease the level of the residual radiation damage by avoiding ion beam-induced amorphization. The main objective of this study is to compare the results of the Rutherford backscattering spectroscopy with channeling and micro-Raman spectroscopy investigations of room temperature and 500°C Al^{+} ion implantation-induced damage in 6H-SiC and its removal by high temperature (up to 1600°C) thermal annealing.
11
Content available remote

Influence of Ion Implantation on Magnetic Structural and Optical Properties of (Ga,Mn)As Epitaxial Films

64%
Yastrubchak O., Kulik M., Żuk J., Domagała J., Szymczak R., Wosiński T., Sadowski J., Tóth A.
Acta Physica Polonica A
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2008
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vol. 114
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issue 5
1445-1450
EN
We performed implantation experiments, applying both the chemically active oxygen ions and inactive ions of neon noble gas, to thin epitaxial films of (Ga,Mn)As ferromagnetic semiconductor. Inspection of their magnetic properties by means of a superconducting quantum interference device magnetometer revealed that the implantation with a low dose of either O or Ne ions completely suppressed ferromagnetism in the films. Both the high resolution X-ray diffraction technique and the Raman spectroscopy showed significant changes in the structural and optical properties of the films caused by oxygen implantation and confirmed the preservation of high structural and optical quality of the neon implanted (Ga,Mn)As films.
12
Content available remote

Ion Beam Synthesis of InAs Nanocrystals in Si: Influence of Thin Surface Oxide Layers

52%
Komarov F., Vlasukova L., Milchanin O., Greben M., Komarov A., Mudryi A., Wesch W., Wendler E., Zuk J., Kulik M., Ismailova G.
Acta Physica Polonica A
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2013
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vol. 123
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issue 5
809-812
EN
Nanosized crystallites have been synthesized in the Si and SiO_2/Si structures by means of As (170 keV, 3.2 × 10^{16} cm^{-2}) and In (250 keV, 2.8 × 10^{16} cm^{-2}) implantation at 25C and 500C and subsequent annealing at 1050C for 3 min. The Rutherford backscattering, transmission electron microscopy, and photoluminescence techniques were used to analyse the impurity distribution as well as the structural and optical characteristics of the implanted layers. It was found that oxidation of samples before thermal treatment significantly reduced the As and In losses. A broad band in the region of 1.2-1.5 μm was detected in the photoluminescence spectra. The highest photoluminescence yield for the samples after "hot" implantation and annealing was obtained. Anodic oxidation of the implanted samples before annealing results in the additional increase of photoluminescence yield.
13
Content available remote

Slow Positron Beam Studies of the Stainless Steel Surface Exposed to Sandblasting

52%
Horodek P., Dryzek J., Kobets A., Kulik M., Lokhmatov V., Meshkov I., Orlov O., Pavlov V., Rudakov A., Sidorin A., Siemek K.
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vol. 125
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issue 3
714-717
EN
The paper presents slow positron beam studies of the stainless steel grade 304 AISI samples annealed in the flow N_2 atmosphere and sandblasted under different pressure from 1 to 7 bar. Heating of specimens caused formation of an additional layer on the surface which can be identified as oxides. Sandblasting reduces the thickness of the oxide layer and also defects concentration (vacancies as we suppose) decreases in dependence on pressure applied during blasting. Additionally, the atomic concentrations of oxygen have been obtained using nuclear methods (Rutherford backscattering and nuclear reactions) in the near surface layers of the studied samples.
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