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Modeling, Simulation and Characterization of Aluminum Implantation in 4H-SiC for Large-Area Photodiode Technology

100%

Kociubiński A.

Acta Physica Polonica A

2017

vol. 132

issue 2

225-228

Simulation, modeling and characterization of the aluminum ion implantation in 4H-SiC for large-area photodiode technology have been presented in this paper. Modeling and simulation have been performed using the SRIM and TCAD software EDA environments. Main goals were to present and compare the single vs. multiple ion implantation results as well to develop processes leading to achieve required implantation profiles.

Phase-Space Approach to the Position-Momentum Correlations of the Conduction Electron States in a Double-Barrier Resonant Nanosystem

76%

Kaczor U., Wołoszyn M., Spisak B.

Acta Physica Polonica A

2017

vol. 132

issue 1

106-108

The phase-space formulation of quantum mechanics based on the Wigner distribution function is applied to investigate the influence of the scattering processes on the electronic position-momentum correlations in the resonant-tunnelling nanosystem.

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2 Acta Physica Polonica A

2 2017

1 Kaczor U.

1 Kociubiński A.

1 Spisak B.

1 Wołoszyn M.

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Modeling, Simulation and Characterization of Aluminum Implantation in 4H-SiC for Large-Area Photodiode Technology

Phase-Space Approach to the Position-Momentum Correlations of the Conduction Electron States in a Double-Barrier Resonant Nanosystem