Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl
Preferences help
enabled [disable] Abstract
Number of results

Results found: 3

Number of results on page
first rewind previous Page / 1 next fast forward last

Search results

help Sort By:

help Limit search:
first rewind previous Page / 1 next fast forward last
|
|
issue 1
234-237
EN
Temperature sensitive thick films based on spinel-type semiconducting ceramics of different chemical composition Cu_{0.1}Ni_{0.1}Co_{1.6}Mn_{1.2}O_{4} (with p^{+}-types of electrical conductivity), Cu_{0.1}Ni_{0.8}Co_{0.2}Mn_{1.9}O_{4} (with p-types of electrical conductivity) and their multilayer p^{+}-p structures were fabricated and studied. These thick-film elements possess good electrophysical characteristics before and after long-term ageing test at 170°C. It is shown that degradation processes connected with diffusion of metallic Ag into film grain boundaries occur in one-layer p- and p^{+}-conductive thick films. The p^{+}-p structures were of high stability, the relative electrical drift was not greater than 1%.
EN
Water-sorption processes near grain boundaries in the MgO-Al₂O₃ ceramics prepared at different temperatures were studied using positron annihilation lifetime spectroscopy. Numerical values of three- and four-component treatment of spectra were used for study of physical- and chemical-sorption processes in the MgO-Al₂O₃ ceramics. To apply mathematical approach in the form of positron-positronium trapping algorithm into three-component treatment of positron annihilation lifetime spectra it was shown that physical-adsorbed water did not modify positron trapping sites near grain boundaries in water-immersed MgO-Al₂O₃ ceramics and localized mainly in nanopores. The chemically-adsorbed water modifies structural extended defects located near grain boundaries that accompanied them by void fragmentation at water desorption.
EN
The results of experimental investigation of structural and physical properties of ZnO and ZnMnO films are presented in this work. The films of ZnO and Zn_{1-x}Mn_{x}O of different thickness were obtained on Al_{2}O_{3}, glass, and KCl substrates in vacuum of 1 × 10^{-5} Torr by the pulsed laser deposition method. The samples were obtained under the substrate temperature 300-473 K. A thickness of films was in the range of 0.5-1 μm depending on the number of laser pulses. The structure of target bulk materials was investigated by X-ray diffraction method. A structure of laser deposited films was investigated by the transmission high-energy electron diffraction method. Electric resistivity was measured in the temperature range 77-450 K. The presence of two activation energies in the temperature range 300-330 K and 330-450 K is followed from the analysis of the films electrical resistivity. These activation energies correspond to two deep donor's energy levels. The shallow donor's level is connected with manganese presence. Optical transmission of ZnO and ZnMnO films deposited at various temperatures were investigated.
first rewind previous Page / 1 next fast forward last
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.