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Magnetoresistive Properties of Manganite-Based Heterojunctions

100%
Devenson J., Vengalis B., Lisauskas V., Oginskis A., Anisimovas F., Ašmontas S.
Acta Physica Polonica A
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2009
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vol. 115
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issue 6
1130-1132
EN
Hole-doped La_{2/3}Ba_{1/3}MnO_{3} (LBaMO), La_{2/3}Ca_{1/3}MnO_{3} (LCaMO) and La_{2/3}Ce_{1/3}MnO_{3} (LCeMO) thin films were grown heteroepitaxially on 0.1 wt.% Nb-doped SrTiO_{3}(100) (STON) substrates by magnetron sputtering. The prepared LBaMO/STON, LCaMO/STON, LCeMO/STON heterostructures demonstrated nonlinear rectifying current-voltage characteristics. Negative magnetorestance values have been indicated at low bias, meanwhile bias-dependent magnetoresistance has been measured at positive bias voltage values U > U_d where U_d is the interfacial potential, corresponding to a steep current increase at a forward bias.
2
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Synthesis and Electrical Properties of La-Pr-Mn-O Thin Films and Heterostructures

100%
Butkutė R., Anisimovas F., Oginskis A., Steikūnienė A., Devenson J., Vengalis B.
Acta Physica Polonica A
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2007
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vol. 111
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issue 1
111-115
EN
In this paper we report the results of synthesis and study of both ceramic samples and thin films of electronically doped La_{0.7}Pr_{0.3}MnO_3 and related heterostructures composed of La_{0.7}Pr_{0.3}MnO_3 and p-type La_{0.67}Ca_{0.33}MnO_3. The ceramic La_{0.7}Pr_{0.3}MnO_3 samples were prepared by a conventional solid state reaction technique. Single phase La_{0.7}Pr_{0.3}MnO_3 thin films and La_{0.7}Pr_{0.3}MnO_3/La_{0.67} Ca_{0.33}MnO_3 heterostructures were grown on lattice-matched perovskite NdGaO_3 substrates by pulsed laser deposition. Electron doping was indicated both for ceramic La_{0.7}Pr_{0.3}MnO_3 samples and thin films from thermopower data. Both ceramic samples and thin films of La_{0.7}Pr_{0.3}MnO_3 demonstrated resistivity of about 10 mΩ cm at 300 K and semiconductor-like resistance vs. temperature behavior with cooling down to 78 K. Meanwhile, the resistance of the La_{0.7}Pr_{0.3}MnO_3/La_{0.67}Ca_{0.33}MnO_3 interface showed an anomalous peak at 185 K. A series of post-deposition annealing experiments demonstrated a crucial role of annealing temperature and ambience on both electrical and magnetic properties of La_{0.7}Pr_{0.3}MnO_3 material and the heterostructures.
3
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Growth and Investigation of p-La_{2/3}Ca_{1/3}MnO_3/n-Si Heterostructures

100%
Anisimovas F., Butkutė R., Devenson J., Maneikis A., Stankevič V., Pyragas V., Vengalis B.
Acta Physica Polonica A
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2008
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vol. 113
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issue 3
997-1000
EN
We report the fabrication and investigation of p-n diode structures based on thin hole-doped La_{2/3}Ca_{1/3}MnO_3 films grown on n-type silicon substrates. La_{2/3}Ca_{1/3}MnO_3 films with typical thickness of about 400 nm were prepared using pulsed laser deposition. Reflection high-energy electron diffraction measurements revealed polycrystalline quality of La_{2/3}Ca_{1/3}MnO_3 thin films on Si substrates. The surface roughness of La_{2/3}Ca_{1/3}MnO_3 films investigated by atomic force microscopy was found to be in the range of 25÷30 nm. Studies of electrical properties showed that La_{2/3}Ca_{1/3}MnO_3/Si heterostructures exhibit nonlinear asymmetric I-V characteristics both at room temperature and at 78 K. Furthemore, it was shown that these I-V dependences are sensitive to magnetic field, especially at lower voltages.
4
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Investigation of Heterostructure Formed from Hole- and Electron-Doped Lanthanum Manganites

84%
Vengalis B., Rosa A., Devenson J., Šliužienė K., Lisauskas V., Oginskis A., Anisimovas F., Pyragas V.
Acta Physica Polonica A
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2005
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vol. 107
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issue 2
290-293
EN
High crystalline quality films of n-La_{2/3}Ce_{1/3}MnO_3, p-La_{2/3}Ca_{1/3}MnO_3 and related p-n diode structures were grown heteroepitaxially on lattice-matched SrTiO_3(100) substrates by dc magnetron sputtering and pulsed laser deposition. The La_{2/3}Ce_{1/3}Mn O_3/La_{2/3}Ca_{1/3}MnO_3 bilayer was patterned into a strip-like geometry to investigate electrical properties of the interface. Significant magnetoresistance values and nonlinear current-voltage characteristics were indicated for the interface of the p-n diode heterostructure.
5
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Growth and Investigation of Heterostructures Based on Multiferroic BiFeO_3

84%
Vengalis B., Devenson J., Oginskis A., Butkutė R., Maneikis A., Steikūnienė A., Dapkus L., Banys J., Kinka M.
Acta Physica Polonica A
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2008
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vol. 113
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issue 3
1095-1098
EN
We report heteroepitaxial growth of multiferroic BiFeO_3 thin films by RF magnetron sputtering on lattice-matched SrTiO_3 substrates, as well as preparation and electrical properties of the heterostructures formed by growing BiFeO_3 thin films on highly conductive LaNiO_3 films and n-Si substrates. Nonlinear and rectifying current-voltage (I-U) characteristics were revealed for the heterojunctions in a wide temperature range (T=78-300 K).
6
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Optical and Terahertz Characterization of Be-Doped GaAs/AlAs Multiple Quantum Wells

68%
Čechavičius B., Kavaliauskas J., Krivaitė G., Seliuta D., Širmulis E., Devenson J., Valušis G., Sherliker B., Halsall M., Steer M., Harrison P.
Acta Physica Polonica A
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2005
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vol. 107
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issue 2
328-332
EN
We report on optical, photoreflectance and surface photovoltage, as well as terahertz photocurrent investigation of Be-doped GaAs/AlAs multiple quantum wells at room and liquid helium temperatures, respectively. From the Franz-Keldysh oscillations observed in photoreflectance spectra we determine built-in electric fields within the structure. Interband transition energies calculated by the transfer matrix method are in qualitative agreement with experimentally determined values for the samples having various, from 2×10^{10} up to 2.5×10^{12} cm^{-2}, Be doping densities. The photocurrent observed in the range of 5.4-7.3 THz we associate with photoionization of Be-acceptor states.
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