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EN
We report on high-excitation luminescence spectroscopy of In_xGa_{1-x}N/GaN multiple quantum wells with a high indium content (x=0.22÷0.30). High excitation conditions enabled us to achieve screening of built-in field by free carriers. This allowed for the evaluation of the influence of the band potential fluctuations due to variation in In-content on optical properties. Enhanced spontaneous emission was found for x≫0.22 due to carrier localization within the chaotic band potential. Meanwhile the stimulated emission was found to be the highest for structures with x≈ 0.25-0.27. We attribute the In-content dependence of the stimulated emission intensity to a trade-off between an increased carrier density and a decrease in the density of states.
EN
We characterized optical and photoelectrical properties of undoped and Ga-doped ZnO layers differently grown on sapphire substrates by using complementary optical methods. Different stimulated emission threshold values for ZnO epitaxial layers grown by pulsed laser deposition and MBE methods were attributed to crystalline quality of the layers and the growth method used. Different carrier lifetimes in various ZnO epitaxial layers are explained by defect-related and intrinsic mechanisms of recombination.
EN
In this work the interaction of lysozyme fibrils with magnetic particles has been studied by atomic force microscopy. The experiments were carried out for a better understanding of the binding process of such complex soft matter systems. The obtained results show that interaction between lysozyme fibrils and magnetic particles starts immediately after mixing them together. Moreover, the samples remain stable in duration of several days after preparation.
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