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1
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Effect of Thermal Annealing on Optical Properties of Implanted Gaas

100%
Kulik M., Komarov F., Mączka D.
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vol. 96
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issue 1
131-135
EN
GaAs samples doped with indium atoms by ion implantation and thermal annealed were studied using a channelling method, Rutherford backscattering, and an ellipsometry. From these measurements it was observed that the layer implanted with 3×10^{16} cm^{-2} indium dose was totally damaged and its optical properties, namely a refraction index n and an extinction coefficient k, corresponded to the amorphous material. Subsequent isobaric heating of the implanted samples resulted in recovery of the crystalline structures with simultaneous change of the n and k index values.
2
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Production of Mo^{+} Beams Using an Arc Discharge Ion Source

88%
Turek M., Droździel A., Pyszniak K., Prucnal S., Mączka D.
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vol. 125
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issue 6
1388-1391
EN
A new method of Mo^{+} ion beam production is presented in the paper. The method bases on the chemical sputtering/etching of the molybdenum parts (e.g. anode) of the arc discharge ion source by the chloride containing plasma. A mixture of CCl_4 (or CHCl_3) vapor and air was used as the feeding substance. The separated Mo^{+} beam current of approximately 18 μA was achieved. The measurements of the ion current dependences on the discharge and filament currents as well as on the magnetic field flux density from the electromagnet surrounding the discharge chamber were performed in order to find the optimal working parameters of the ion source.
3
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Production of Doubly Charged Ions Using a Hollow Cathode Ion Source with an Evaporator

88%
Turek M., Droździel A., Pyszniak K., Mączka D., Słowiński B.
Acta Physica Polonica A
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2013
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vol. 123
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issue 5
843-846
EN
The paper describes the production of doubly charged ions from solids and gases using a hollow cathode ion source with an internal evaporator heated by a spiral cathode filament and arc discharge. The obtained currents were 15 μA for Bi^{2+}, 10 μA for As^{2+} and Al^{2+}, 8 μA for Kr^{2+} and Xe^{2+}, 5 μA for In^{2+} and Ge^{2+}, enabling moderate dose implantations ( ≈ 10^{15} cm^{-3}) with doubly charged ions. Characteristics of the ion source are presented and discussed in order to choose the optimal working parameters. A brief presentation of numerical model of doubly and singly charged ions in the ion source is given. The calculated results (dependences of ion current on the anode voltage) are in good agreement with the experimental data.
4
Content available remote

Plasma Ion Source with an Internal Evaporator

88%
Turek M., Droździel A., Pyszniak K., Prucnal S., Mączka D.
Acta Physica Polonica A
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2011
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vol. 120
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issue 1
184-187
EN
A new construction of a hollow cathode ion source equipped with an internal evaporator heated by a spiral cathode filament and arc discharge is presented. The source is especially suitable for production of ions from solids. The proximity of arc discharge region and extraction opening enables production of intense ion beams even for very low discharge current (I_{a} = 1.2 A). The currents of 50 μA (Al^{+}) and 70 μA (Bi^{+}) were obtained using the extraction voltage of 25 kV. The source is able to work for several tens of hours without maintenance breaks, giving possibility of high dose implantations. The paper presents the detailed description of the ion source as well as its experimental characteristics like dependences of extracted currents and anode voltage on anode and cathode currents.
5
Content available remote

Thermal Desorption of Krypton Implanted into Silicon

76%
Turek M., Droździel A., Wójtowicz A., Filiks J., Pyszniak K., Mączka D., Yuschkevich Y.
Acta Physica Polonica A
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2017
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vol. 132
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issue 2
249-253
EN
The thermal desorption spectrometry studies of krypton implanted Si samples are presented. Implantations (with the fluence 2×10¹⁶ cm¯²) were done with the energies 100, 150, and 200 keV. Additionally, a 200 keV and 100 keV Kr⁺G double implantation was performed. A sudden Kr release was observed in the ≈1100-1400 K range, most probably coming from the gas bubbles in cavities. The desorption activation energy varies from 2.5 eV (100 keV) to 0.8 (200 keV). The peak splitting suggests existence of two kinds of cavities trapping the implanted noble gas. Two Kr releases are observed for the 200 and 100 keV double-implanted samples. The peak shift of the release corresponding to 100 keV implantation could be a result of both introduced disorder and higher effective Kr concentration. The desorption activation energy is risen to ≈3.2 eV for both releases.
6
Content available remote

Thermal Desorption of Helium from Defected Silicon

64%
Turek M., Droździel A., Pyszniak K., Wójtowicz A., Mączka D., Yuschkevich Y., Vaganov Y., Żuk J.
Acta Physica Polonica A
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2015
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vol. 128
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issue 5
849-852
EN
The thermal desorption spectroscopy measurements of He implanted silicon samples are reported. The He implantation energy was 90 keV (at 45° tilt) while the fluence was 10¹⁶ cm¯². Additionally, the influence of Si pre-implantation (fluences in the range 10¹⁴-10¹⁶ cm¯², E=260 keV) was under investigation. The He releases from both interstitials/vacancies (β peak) and cavities (α peak or rather band consisting probably of at least two peaks) were observed. The α peak disappears for the pre-implantation fluences larger than 10¹⁵ cm¯², while β peak becomes broader and shifts toward higher temperatures. The thermal desorption spectra were collected using heating ramp rates in the range 0.3-0.7 K/s. Desorption activation energy of the β peak for different pre-implantation fluences was found using the Redhead analysis of the β peak shift. It varies from 0.97 eV for the sample that was not pre-implanted up to 1.3 eV for the sample pre-implanted with the fluence 10¹⁶ cm¯².
7
Content available remote

Production of Molybdenum and Tantalum Ion Beams using CCl₂F₂

64%
Turek M., Droździel A., Pyszniak K., Filiks J., Prucnal S., Mączka D., Vaganov Y., Węgierek P.
Acta Physica Polonica A
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2017
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vol. 132
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issue 2
283-287
EN
A new method of refractory metal (like Mo and Ta) ion beam production using the arc discharge ion source and CCl₂F₂ (dichlorodifluoromethane) used as a feeding gas supported into the discharge chamber is presented. It is based on etching of the refractory metal parts (e.g. anode or a dedicated tube) Cl and F containing plasma. The results of measurements of the dependences of ion currents on the working parameters like discharge and filament currents as well as on the magnetic field flux density of an external electromagnet coil are shown and discussed. The separated Mo⁺ and Ta⁺ beam currents of approximately 22 μA and 2 μA, respectively, were obtained.
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