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Magnetic Properties of (Zn,Mn)Te Semimagnetic Alloy Co-Doped with Chromium

100%
Avdonin A., Van Khoi L., Knoff W., Gałązka R.
Acta Physica Polonica A
|
2009
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vol. 116
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issue 5
974-975
EN
Results of simultaneous doping of ZnTe with manganese and chromium are presented. An increase of magnetization of ferromagnetic Cr-related clusters with manganese concentration is observed. Phosphorus doping prevents the formation of ferromagnetic clusters.
2
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Bound Exciton Luminescence in Phosphorus Doped Cd_{1-x}Mn_{x}Te Crystals

100%
Van Khoi L., Gałązka R., Witkowska B., The Khoi N.
Acta Physica Polonica A
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1998
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vol. 94
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issue 3
392-396
EN
Measurement of photoluminescence as a function of temperature and of magnetic field in p-type phosphorus doped Cd_{1-x}Mn_{x}Te is reported. From the conduction band-acceptor level transition, the ionization energy of P-acceptors is obtained to be 54ą1 meV. The photoluminescence spectrum in the band edge region exhibits three maxima connected with the recombination of excitons bound to neutral acceptors (A^{0}, X), excitons bound to neutral donors (D^{0},X), and free excitons (X) at energies E_{(A^{0},X)}=1.606, E_{(D^{0},X)}=1.610, and E_{X}=1.614 eV, respectively. At T=1.4 K a strong increase in PL intensity of (A^{0}, X) line 8-fold as a function of magnetic field is found and shown to originate from the magnetic field-induced lowering of the acceptor binding energy and increase in the hole effective volume.
3
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Magnetoresistance and Electroluminescence near the Curie-Weiss Temperature in the Zn_{1-x}Mn_{x}Te Light Emitting Devices

88%
Van Khoi L., Avdonin A., Szymczak R., Gałązka R., Potemski M.
Acta Physica Polonica A
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2009
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vol. 116
|
issue 5
941-943
EN
The light emitting devices based on the p-Zn_{1-x}Mn_{x}Te bicrystals have been fabricated. The Zn_{1-x}Mn_{x}Te devices produce red and green emission originating from the internal d-shell transitions in the Mn^{2+} ions and the donor-acceptor pairs recombination, respectively. A critical behavior of the magnetic field dependence of the green emission intensity and a positive magnetoresistance near the Curie-Weiss temperature in the Zn_{1-x}Mn_{x}Te devices was observed.
4
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Self-Induced Persistent Photoconductivity in ZnTe-Cd_{1-x}Mn_{x}Te_{1-y}Se_{y} Heterojunctions

88%
Van Khoi L., Dobrowolski W., Zakrzewski A., Dobaczewski L., Gałązka R.
|
EN
At temperatures lower than 200 K the photomemory effect has been observed in ZnTe-Cd_{1-x}Mn_{x}Te_{1-y}Se_{y} heterojunctions. The persistent photoconductivity can be achieved either by illumination from an external light source or by a self-absorption of the electroluminescence radiation when a voltage of about 10 V for a few seconds is applied to the diode. Current-voltage characteristics are of the form I~ V^{m}. The capacitance and electroluminescence measurements show that the photomemory effect in ZnTe-Cd_{1-x}Mn_{x} Te_{1-y}Se_{y} heterojunctions can be caused by the bistable nature of the In dopant in the Cd_{1-x}Mn_{x}Te_{1-y}Se_{y} substrate. In the high resistivity interface layer and the substrate material indium forms centers similar to DX-like centers in Zn_{x}Cd_{1-x}Te and Cd_{1-x}Mn_{x}Te.
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