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Investigation of Photoelectric Properties of ZnSe:Cr and ZnTe:V:Al by Picosecond Four-Wave Mixing Technique

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Kadys A., Sudzius M., Jarasiunas K., Ivanov V., Godlewski M., Launay J.
Acta Physica Polonica A
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2004
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vol. 105
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issue 6
651-657
EN
Role of deep impurity levels in carrier generation, transport, and recombination were investigated in bulk ZnSe:Cr and ZnTe:V:Al crystals by four-wave mixing technique. The temporal and exposure dependencies of optical nonlinearities in ZnSe:Cr evidenced an influence of Cr1+/Cr2+ states in carrier generation, exhibited very fast carrier relaxation, and revealed the presence of competing recombination mechanisms. Similar investigations in ZnTe:V:Al showed an effective carrier generation from Al-induced defect complexes as well as very fast carrier capture by Zn-vacancies.
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