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Thermally Induced Intermixing of InGaAs/GaAs Single Quantum Wells

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Kozanecki A., Gillin W., Sealy B.
Acta Physica Polonica A
|
1993
|
vol. 84
|
issue 4
621-624
EN
In this work interdiffusion and strain relaxation in In_{0.2}Ga_{0.8}As/GaAs single quantum wells subjected to rapid thermal annealing have been studied using photoluminescence and Rutherford backscattering of 1.5 MeV He^{+} ions. It has been found that the diffusion coefficient of In atoms in GaAs, evaluated from the photoluminescence spectra for the assumed Gaussian well shapes, agrees within 30% with that obtained using Rutherford backscattering. Channeling angular scans, through the ⟨110⟩ axial direction of the heterostructures indicate that strain relaxation in the intermixed wells is exclusively due to compositional shallowing of the wells.
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