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1

Frequency Dependence of Shot Noise in Resonant Diodes under Coherent Tunneling

100%

Aleshkin V., Reggiani L., Rosini M.

Acta Physica Polonica A

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2005

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vol. 107

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issue 2

298-303

EN

The current spectral density and the Fano factor of a resonant diode are investigated as a function of frequency up to values just below the inverse of the transit time. We consider the case of coherent tunneling for a symmetric double barrier structure at voltages up to the first current peak at 77 K. At high frequencies the Fano factor is found to become suppressed systematically at a value of 0.25 independently of frequency. This suppression below 0.5 is an indication of coherent against sequential tunneling transport.

2

THz Spectroscopy of Extremely Shallow Acceptors States in Ge/GeSi Multiple-Quantum-Well Heterostructures

76%

Aleshkin V., Erofeeva Y., Gavrilenko V., Ikonnikov A., Kozlov D., Kuznetsov O., Veksler D.

Acta Physica Polonica A

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2005

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vol. 107

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issue 1

137-141

EN

New shallow acceptor magnetoabsorption lines in THz range have been discovered under bandgap photoexcitation in strained Ge/GeSi multiple-quantum-well heterostructures. It is shown, both theoretically and experimentally, that the resonant absorption results from the photoionization of A^+-centers and from 1s → 2p_+-type transitions from the ground state of the barrier-situated A^0-centers into excited states in the 1st and 2nd electronic subbands. The shallowest discovered ground acceptor states (E_B≤0.5 meV) are attributed to the "barrier-spaced" acceptors (a hole bound with an acceptor ion in the neighboring Ge quantum well).

3

Mode-Locked Dual-Wavelength Heterolasers for Terahertz Generation via Intracavity Wave Mixing

76%

Belyanin A., Kocharovsky V., Kocharovsky V., Kukushkin V., Andrianov A., Aleshkin V., Dubinov A.

Acta Physica Polonica A

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2008

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vol. 113

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issue 3

869-873

EN

It is shown that the mid/far-infrared (IR) and THz pulse generation via intracavity difference-frequency mixing in quantum-well dual-wavelength heterolasers can be rather efficient under mode-locking regime for one or both lasing fields even at room temperature. In a simple model we derive an explicit formula for intensity of the generated IR or THz pulse and find that this method is capable of producing picosecond pulses at ≈1 GHz repetition rate with the peak power of the order of 1 W and ≤ 0.2 mW at 10 μm and 50 μm wavelengths, respectively.

4

Parametric Generation of Middle and Far Infrared Radiation in GaAs-Based Semiconductor Lasers and Waveguides

52%

Aleshkin V., Afonenko A., Biryukov A., Gavrilenko V., Dubinov A., Kocharovsky V., Morozov S., Maremynin K., Nekorkin S., Zvonkov B., Zvonkov N.

Acta Physica Polonica A

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2005

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vol. 107

|

issue 1

7-13

EN

A possibility of parametric generation of middle and far infrared radiation due to the lattice nonlinearity in semiconductor laser diode and waveguide is discussed. Three possible waveguide constructions for effective generation are considered. The parametric generation method is shown to provide generation power of the order of milliwatt for middle infrared radiation and of tens of microwatt for far infrared radiation using modern quantum well laser diodes.

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4 Acta Physica Polonica A

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1 Andrianov A.

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1 Ikonnikov A.

1 Kozlov D.

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1 Kuznetsov O.

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1 Reggiani L.

1 Rosini M.

1 Veksler D.

1 Zvonkov B.

1 Zvonkov N.

Frequency Dependence of Shot Noise in Resonant Diodes under Coherent Tunneling

THz Spectroscopy of Extremely Shallow Acceptors States in Ge/GeSi Multiple-Quantum-Well Heterostructures

Mode-Locked Dual-Wavelength Heterolasers for Terahertz Generation via Intracavity Wave Mixing

Parametric Generation of Middle and Far Infrared Radiation in GaAs-Based Semiconductor Lasers and Waveguides