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Optically Active Si:Er Layers Grown by the Sublimation MBE Method

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Stepikhova M., Andreev A., Andreev B., Krasil'nik Z., Shmagin V., Kuznetsov V., Rubtsova R., Jantsch W., Ellmer H., Palmetshofer L., Preier H., Karpov Y., Piplits K., Hutter H.

Acta Physica Polonica A

1998

vol. 94

issue 3

549-554

We report the first application of sublimation molecular beam epitaxy to grow uniformly and selectively doped Si:Er layers with Er concentration up to 5×10^{18} cm^{-3}. The Hall concentration of electrons is about 10% of total Er contents. The mobility is 300-400 cm^{2} V^{-1} s^{-1} at 300 K. All samples exhibit photoluminescence at 1.537 μm up to 100-140 K.

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1 Acta Physica Polonica A

1 1998

1 Andreev A.

1 Andreev B.

1 Ellmer H.

1 Hutter H.

1 Jantsch W.

1 Karpov Y.

1 Krasil'nik Z.

1 Kuznetsov V.

1 Palmetshofer L.

1 Piplits K.

1 Preier H.

1 Rubtsova R.

1 Shmagin V.

1 Stepikhova M.

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Optically Active Si:Er Layers Grown by the Sublimation MBE Method