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Kinetics of Charge Transport in Wide-Band Semiconductors at the Detection of X-Ray Radiation

100%
Degoda V., Sofienko A.
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issue 1
155-160
EN
As a result of absorption of X-ray quantum in a semiconductor, the generation of electron-hole pairs takes place in a small volume (diameter < 0.5 μm). Their surplus energy is lost due to the scattering on phonons of the crystal lattice. Spatial distribution of the charge carriers makes the form of current pulse on electrodes of the crystal complicated when an external electric field is applied. We present a logical chart of construction of basic kinetic model of X-ray conductivity (XRC) in semiconductors that uses the successive in time calculation of the spatial distribution of free charge carriers and the diffusive-drift model of motion of free carriers in a solid. The basic form of current pulse in an external circle was obtained in the analytical kind for the case of an ideal semiconductor, e.g. that does not contain deep traps and recombination centers, as well as for the case of a crystal with dominant shallow or deep traps of electrons and holes.
2
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Dose Dependences of the Conductivity and Luminescence in ZnSe Single Crystals

81%
Degoda V., Alizadeh M., Martynyuk N., Pavlova N.
Acta Physica Polonica A
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2018
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vol. 133
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issue 4
984-989
EN
The studies of time-resolved dose dependences of conductivity and luminescence in ZnSe crystals at various temperatures (8, 85, 295, and 430 K) under X-ray and UV-excitation have revealed that dose dependences under X-ray excitation build up much more slowly and are more informative in comparison with UV-excitation. It is due to high penetrating depth of X-ray radiation and respective involvement of a large sample volume in the kinetic processes. Also, due to the local inhomogeneity of the excitation in the absorption of X-quantum, a significant share of the generated electron-hole pairs recombine in this local area creating a scintillation pulse, and not participating in the conductivity. The delay in the onset of the X-ray conductivity buildup at 8 K for several seconds is due to the high efficiency of the localization of free carriers in the traps, all of which become deep at this temperature. The different buildups of various bands of luminescence of irradiation time can be explained by not only different concentration of luminescence centers but also by their localization in various sections of free charge carriers. Dose dependences of the luminescence and conductivity also show that the scintillation pulse amplitudes and the current pulse amplitudes of the X-ray conductivity are not constant during irradiation of the ZnSe crystals.
3
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Oscillatory Regularity of Charge Carrier Trap Energy Spectra in ZnSe Single Crystals

71%
Degoda V., Gumenjuk A., Pavlova N., Sofiienko A., Sulima S.
Acta Physica Polonica A
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2016
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vol. 129
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issue 3
304-309
EN
This article presents the results of an experimental investigation of the energy spectra of charge carrier traps in undoped high-resistivity ZnSe single crystals. Fourteen peaks were found in the thermostimulated luminescence spectra of the ZnSe samples at temperatures between 8 K and 450 K, and the thermal activation energies of the charge carrier traps were estimated for the most intense peaks. It was found that the energy spectra of the charge carrier traps in ZnSe exhibit oscillatory regularity, and the energy of a vibrational quantum was estimated to be ħω = 206 cm¯¹, which is in good agreement with the vibrational mode in the Raman spectrum. Additionally, a linear relationship was observed between the thermal activation energies of the charge carrier traps and the temperature positions of the maxima in the thermostimulated luminescence of ZnSe.
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