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THz Spectroscopy of Extremely Shallow Acceptors States in Ge/GeSi Multiple-Quantum-Well Heterostructures

100%

Aleshkin V., Erofeeva Y., Gavrilenko V., Ikonnikov A., Kozlov D., Kuznetsov O., Veksler D.

Acta Physica Polonica A

2005

vol. 107

issue 1

137-141

New shallow acceptor magnetoabsorption lines in THz range have been discovered under bandgap photoexcitation in strained Ge/GeSi multiple-quantum-well heterostructures. It is shown, both theoretically and experimentally, that the resonant absorption results from the photoionization of A^+-centers and from 1s → 2p_+-type transitions from the ground state of the barrier-situated A^0-centers into excited states in the 1st and 2nd electronic subbands. The shallowest discovered ground acceptor states (E_B≤0.5 meV) are attributed to the "barrier-spaced" acceptors (a hole bound with an acceptor ion in the neighboring Ge quantum well).

Terahertz Luminescence and Absorption under Impurity Breakdown in Quantum Wells and Strained Semiconductor Layers

68%

Vorobjev L., Firsov D., Shalygin V., Panevin V., Sofronov A., Ustinov V., Zhukov A., Egorov A., Andrianov A., Zakhar'in A., Ganichev S., Danilov S., Kozlov D.

Acta Physica Polonica A

2008

vol. 113

issue 3

925-928

We present the results of THz luminescence investigations in structures with Si-doped quantum wells and Be-doped GaAsN layers under strong lateral electric field. The peculiar property of these structures is the presence of resonant impurity states which arise due to dimensional quantization in quantum wells and due to built-in strain in GaAsN epilayers. The experimentally obtained THz emission spectra consist of the lines attributed to intra-center electron transitions between resonant and localized impurity states and to the electron transitions involving the subband states. Absorption of THz radiation and its temperature dependence was also studied in structure with tunnel-coupled quantum wells at equilibrium conditions and under electric field.

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2 Acta Physica Polonica A

1 2008

1 2005

2 Kozlov D.

1 Aleshkin V.

1 Andrianov A.

1 Danilov S.

1 Egorov A.

1 Erofeeva Y.

1 Firsov D.

1 Ganichev S.

1 Gavrilenko V.

1 Ikonnikov A.

1 Kuznetsov O.

1 Panevin V.

1 Shalygin V.

1 Sofronov A.

1 Ustinov V.

1 Veksler D.

1 Vorobjev L.

1 Zakhar'in A.

1 Zhukov A.

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THz Spectroscopy of Extremely Shallow Acceptors States in Ge/GeSi Multiple-Quantum-Well Heterostructures

Terahertz Luminescence and Absorption under Impurity Breakdown in Quantum Wells and Strained Semiconductor Layers