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Bremsstrahlung Isochromat Study of Si(111) by 6.2 eV Photons

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Sobczak L., Guichar G. M., Hamdache R., Sebenne C.
Acta Physica Polonica A
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1991
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vol. 79
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issue 5
745-750
EN
We present the first experimental bremsstraldung isochromats at an extremal low photon energy of 6.2 eV measured by using a grating spectrometer placed in the air outside the ultra-high-vacuum chamber. Isochromats of the Si(111) cleaved surface have been measured for normal incidence of electrons. We have found that a free electron approximation for the initial electron state is quite good for the interpretation of bulk interband traηsitions occurring in the 6.2 eV isochromat of Si(111). A strong sensitivity for surface roughness of the 6.2 eV isochromat is observed.
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Cd_{1-x}Fe_{x}Se/Fe Interface Formation Observed by Means of Photoemission Spectroscopy

64%
Guziewicz E., Orłowski B., Kowalski B., Barrett N., Martinotti D., Guillot C., Lacharme J., Sebenne C.
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EN
We present a new outlook at the study of metal-semiconductor interface formation. A resonant photoemission spectroscopy tuned to the Fe 3p-3d transition (56 eV) was used to investigate the changes after sequential deposition of Fe atoms on freshly cleaved Cd_{0.86}Fe_{0.14}Se crystal surface. In the first stages (0.6-4 ML) of Fe deposition the contribution of Fe 3d electrons to the valence band grows up markedly indicating the increase in Fe content in the Cd_{0.86}Fe_{0.14}Se crystal surface region. When the amount of Fe exceed 40 ML the resonant photoemission spectra became similar to the Fe metal with some contribution of the ternary crystal substrate.
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