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1
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High Quality Gate Insulator/GaN Interface for Enhancement-Mode Field Effect Transistor

100%
Taube A., Kruszka R., Borysiewicz M., Gierałtowska S., Kamińska E., Piotrowska A.
Acta Physica Polonica A
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2011
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vol. 120
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issue 6A
A-22-A-24
EN
The capacitance-voltage measurements were applied for characterization of the semiconductor/dielectric interface of GaN MOS capacitors with SiO_2 and HfO_2/SiO_2 gate stacks. From the Terman method low density of interface traps (D_{it} ≈ 10^{11} eV^{-1} cm^{-2}) at SiO_2/GaN interface was calculated for as-deposited samples. Samples with HfO_2/SiO_2 gate stacks have higher density of interface traps as well as higher density of mobile charge and effective charge in the dielectric layers. High quality of SiO_2/GaN interface shows applicability of SiO_2 as a gate dielectric in GaN MOSFET transistors.
2
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Characterization of Al2O3/4H-SiC and Al2O3/SiO2/4H-SiC MOS structures

84%
Kosiel K., Król K., Taube A., Guziewicz M., Gołaszewska-Malec K., Kruszka R., Kamińska E., Piotrowska A.
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2016
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issue 3
3
Content available remote

Two-Probe Measurements of Electron Transport in GaN:Si/(Ga,Mn)N/GaN:Si Spin Filter Structures

68%
Kalbarczyk K., Foltyn M., Grzybowski M., Stefanowicz W., Adhikari R., Li T., Kruszka R., Kamińska E., Piotrowska A., Bonanni A., Dietl T., Sawicki M.
Acta Physica Polonica A
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2016
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vol. 130
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issue 5
1196-1198
EN
Results of two-probe magnetoresistance studies in GaN:Si/(Ga,Mn)N/GaN:Si prospective spin filter structures are reported. It is postulated that transport characteristics are strongly influenced by highly conductive threading dislocations and that shrinking of the device size partially mitigates the issue. Simultaneously, maxima at ≈1500 Oe on overall weak, up to 2%, negative magnetoresistance are seen at low temperature, whose origin has been tentatively assigned to effects taking place at the contacts areas.
4
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Planar Optical Waveguides for Application in Optoelectronic Gas Sensors

68%
Golaszewska K., Kamińska E., Pustelny T., Struk P., Piotrowski T., Piotrowska A., Ekielski M., Kruszka R., Wzorek M., Borysiewicz M., Pasternak I., Gut K.
Acta Physica Polonica A
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2008
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vol. 114
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issue 6A
A-223-A-230
EN
In the paper, the results of technological investigations on planar optical waveguides based on high band gap oxide semiconductors were presented. Investigations concerned the technologies of depositing very thin layers of: zinc oxide ZnO, titanium dioxide TiO_2 and tin dioxide SnO_2 on substrates of quartz glass plates. There were investigated both morphological structures of the produced layers and their optical properties. The paper also presents investigations on the technology of input-output light systems in the Bragg grating structures.
5
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Technology of Ultrathin NbN and NbTiN Films for Superconducting Photodetectors

68%
Guziewicz M., Slysz W., Borysiewicz M., Kruszka R., Sidor Z., Juchniewicz M., Golaszewska K., Domagala J., Rzodkiewicz W., Ratajczak J., Bar J., Wegrzecki M., Sobolewski R.
Acta Physica Polonica A
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2011
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vol. 120
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issue 6A
A-76-A-79
EN
We report fabrication and characterization of ultrathin NbN and NbTiN films designed for superconducting photodetectors. Our NbN and NbTiN films were deposited on Al_2O_3 and Si single-crystal wafers by a high-temperature, reactive magnetron sputtering method and, subsequently, annealed at 1000°C. The best, 18 nm thick NbN films deposited on sapphire exhibited the critical temperature of 15.0 K and the critical current density as high as ≈ 8 × 10^6 A/cm^2 at 4.8 K.
6
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Capability of Semiconducting NiO Films in Gamma Radiation Dosimetry

68%
Guziewicz M., Jung W., Grochowski J., Borysiewicz M., Golaszewska K., Kruszka R., Baranska A., Piotrowska A., Witkowski B., Domagala J., Gryzinski M., Tyminska K., Stonert A.
Acta Physica Polonica A
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2011
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vol. 120
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issue 6A
A-69-A-72
EN
Electrical properties of RF magnetron sputtered p-NiO films were characterized after fabrication and after gamma irradiations using ^{137}Cs and ^{60}Co sources. Electrical parameters are obtained from the Hall measurements, impedance spectroscopy and C-V measurement of n-Si/p-NiO junction diodes. The results show that resistivity of the NiO film is gradually increased following after sequential irradiation processes because of the decrease in holes' concentration. Hole concentration of a NiO film decreases from the original value of 4.36 × 10^{16} cm^{-3} to 2.86 × 10^{16} cm^{-3} after ^{137}Cs γ irradiation with doses of 10 Gy. In the case of γ irradiation from ^{60}Co source, hole concentration of the film decreases from 6.3 × 10^{16}/cm^3 to 4.1 × 10^{16}/cm^3 and to 2.9 × 10^{16}/cm^3 after successive expositions with a dose of 20 Gy.
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