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Anisotropic Transport of Electrons in ZnS

100%

Xu Z.

Acta Physica Polonica A

2004

vol. 105

issue 4

383-388

We study the anisotropic electronic transport property of ZnS-type thin-film electroluminescence displays by Monte Carlo simulation. The simulation contains an accurate and efficient description of the anisotropic band structure and various scattering mechanisms like phonon scattering and impurity scattering. The electronic transport processes in three devices with different ZnS-layer orientations are simulated. From the obtained energy population and average energy of electrons, we conclude that the 〈100〉 direction is the best for electron acceleration under high electric field. We propose that new attempts in using this direction for ZnS-layer deposition will result in an improvement of the performance of thin-film electroluminescence displays.

Superconducting Density of States in B-Doped Diamond

33%

Onufriienko O., Samuely T., Zhang G., Vanacken J., Xu Z., May P., Szabó P., Moshchalkov V., Samuely P.

Acta Physica Polonica A

2017

vol. 131

issue 4

1033-1035

In the presented work, we investigated the superconducting boron doped diamond polycrystalline film prepared by chemical vapor deposition by means of scanning tunneling microscopy/spectroscopy. Differential conductance spectra measured at various temperatures were used to obtain the values of superconducting critical temperature and energy gap. Comparing various theoretical models fitted to the differential conductance spectra measured at 0.5 K suggests weak pair breaking. However, this cannot account for the high 2Δ/(k_{B}T_{C}) ratio, which therefore indicates strong coupling.

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2 Acta Physica Polonica A

1 2017

1 2004

2 Xu Z.

1 May P.

1 Moshchalkov V.

1 Onufriienko O.

1 Samuely P.

1 Samuely T.

1 Szabó P.

1 Vanacken J.

1 Zhang G.

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Anisotropic Transport of Electrons in ZnS

Superconducting Density of States in B-Doped Diamond