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Calcium Fluoride Barrier Layer in Tunnel Emitter Phototransistor

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Illarionov Y., Vexler M., Suturin S., Fedorov V., Sokolov N.
Acta Physica Polonica A
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2012
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vol. 121
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issue 1
158-161
EN
Owing to the optimized growth technology of the 1-2 nm calcium fluoride films on n-(111)-silicon, metal/tunnel-insulator/semiconductor phototransistors have been fabricated by the molecular beam epitaxy at the temperature 250°C. The characteristics of these transistors were measured in a wide range of voltages, and the proofs for current gain were found throughout the investigated range. The gain value exceeds 10^3 approaching the theoretically estimated value in this system. The stability and reproducibility of the device characteristics were satisfactory. The results support the candidacy of calcium fluoride for being a vital dielectric in silicon-based functional electronics.
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