Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl
Preferences help
enabled [disable] Abstract
Number of results

Results found: 2

Number of results on page
first rewind previous Page / 1 next fast forward last

Search results

help Sort By:

help Limit search:
first rewind previous Page / 1 next fast forward last
EN
The influence of repetition number N on magnetoresistance, magnetic reversal and structure of sputtered (Ni_{80}Fe_{20}/Au/Co/Au)_N multilayers was investigated. The multilayers are characterized by in-plane (Ni_{80}Fe_{20}) and out-of-plane (Co) magnetic anisotropy of ferromagnetic layers and show considerable magnetoresistance effect (ΔR/R) of the giant magnetoresistance type. Increased N results in an enhancement of ΔR/R from about 0.5% for N=1 up to above 5% for N=15. This enhancement is caused by: diminishing the role of electron scattering at the surfaces, decreasing the effect of structural imperfection and the lack of the perpendicular anisotropy of Co layer in the first period. The interpretation is corroborated by low ΔR/R value observed for N=1 and an evolution of the ΔR(H)/R dependence with increasing N. The anisotropy field of Co layers also increases with N.
EN
We report on an incorporation of self-assembled templates of superparamagnetic Fe-O nanoparticles into tunnel magnetoresistance devices. We fabricated a multilayer stack composed of the following layer sequence: Cr/Au/Co/NP/Co/Cu on Si(100) substrate where NP stands for a self-assembled layer of nanoparticles deposited by the Langmuir-Blodgett technique. The X-ray reflectivity and grazing-incidence small angle X-ray scattering were employed to study the layers thicknesses and interface morphology in each preparation step. In particular, the grazing-incidence small angle X-ray scattering was measured before and after the nanoparticle incorporation as well as on the complete tunnel magnetoresistance stack. In this way, in-depth morphology profile during subsequent preparation steps was obtained. We demonstrate that X-ray analysis of the deposited tunnel magnetoresistance stack is essential for successful fabrication of novel hybrid devices consisting of self-assembled nanoparticles.
first rewind previous Page / 1 next fast forward last
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.