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Swift Xe^{26+} Ion Irradiation Effect on Luminescent Properties of Undoped and Cd-Doped ZnO Films

100%

Myroniuk D., Lashkarev G., Shtepliuk I., Skuratov V., Reszka A., Kowalski B.

Acta Physica Polonica A

2014

vol. 126

issue 5

1199-1202

Here we report the effect of the irradiation by 167 MeV Xe^{26+} ions (in the fluence range up to 3× 10^{12} ions/cm^2) on the undoped and Cd-doped (0.4, 0.5 at.%) ZnO films deposited by radiofrequency magnetron sputtering. As-grown and irradiated samples were investigated by cathodoluminescence spectroscopy. It was found that the radiation causes a decrease in intensity of luminescent peaks and a redistribution of the radiative recombination channels. We revealed that the cadmium incorporation into ZnO lattice enhances the radiation resistance of ZnO film.

Effects of Ar/O_2 Gas Ratio on the Properties of the Zn_{0.9}Cd_{0.1}O Films Prepared by DC Reactive Magnetron Sputtering

84%

Shtepliuk I., Lashkarev G., Khomyak V., Marianchuk P., Koreniuk P., Myroniuk D., Lazorenko V., Timofeeva I.

Acta Physica Polonica A

2011

vol. 120

issue 6A

A-61-A-65

Zn_{0.9}Cd_{0.1}O ternary alloys have been grown on the sapphire substrates by using the direct current (dc) magnetron sputtering. X-ray diffraction measurements showed that all samples were highly oriented films along the c-axis perpendicular to the substrate surface. X-ray diffraction confirmed that the crystal quality of Zn_{0.9}Cd_{0.1}O films can be controlled by changing the gas ratio of Ar/O_2. The optical properties of these films have been investigated by means of the optical transmittance and the low-temperature photoluminescence spectra. It was found that the optical band gap of the deposited films can be tuned by growth parameters. The luminescence processes are considered in the terms of alloy fluctuation.

Effect of High Energy Electron Irradiation on Structure and Optical Properties of ZnO Films

84%

Myroniuk D., Lashkarev G., Shtepliuk I., Lazorenko V., Maslyuk V., Timofeeva I., Romaniuk A., Strelchuk V., Kolomys O., Khomyak V.

Zinc oxide films were grown on sapphire substrates by direct current magnetron sputtering and irradiated by electrons with energy 10 MeV and fluences 10^{16} and 2 × 10^{16} cm^{-2}. As-grown and irradiated samples were investigated by X-ray diffraction and photoluminescence spectroscopy. It was found that radiation causes the appearance of complex defects, reducing the size of coherent scattering regions and the increase of the defect PL band.

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3 Acta Physica Polonica A

1 2014

1 2013

1 2011

3 Lashkarev G.

3 Myroniuk D.

3 Shtepliuk I.

2 Khomyak V.

2 Lazorenko V.

2 Timofeeva I.

1 Kolomys O.

1 Koreniuk P.

1 Kowalski B.

1 Marianchuk P.

1 Maslyuk V.

1 Reszka A.

1 Romaniuk A.

1 Skuratov V.

1 Strelchuk V.

Search results

Swift Xe^{26+} Ion Irradiation Effect on Luminescent Properties of Undoped and Cd-Doped ZnO Films

Effects of Ar/O_2 Gas Ratio on the Properties of the Zn_{0.9}Cd_{0.1}O Films Prepared by DC Reactive Magnetron Sputtering

Effect of High Energy Electron Irradiation on Structure and Optical Properties of ZnO Films